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2N2920

  • Available: 2746

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $4.00000US $4.00
10+US $3.60000US $36.00
30+US $2.80000US $84.00
100+US $2.30000US $230.00
500+US $2.20000US $1100.00
1000+US $2.00000US $2000.00

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Microsemi
  • Manufacturer's Part #
    2N2920
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - Bipolar (BJT) - Arrays
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Polarity
    NPN
  • Packaging
    Bulk
  • Published
    2007
  • Part Status
    Active
  • Power - Max
    350mW
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Through Hole
  • Number of Pins
    6
  • Package / Case
    TO-78-6 Metal Can
  • Contact Plating
    Lead, Tin
  • Transistor Type
    2 NPN (Dual)
  • Factory Lead Time
    12 Weeks
  • Power Dissipation
    350mW
  • Number of Elements
    2
  • Radiation Hardening
    No
  • Max Collector Current
    30mA
  • Max Power Dissipation
    350mW
  • Operating Temperature
    200°C TJ
  • Supplier Device Package
    TO-78-6
  • Max Operating Temperature
    200°C
  • Min Operating Temperature
    -65°C
  • Emitter Base Voltage (VEBO)
    6V
  • Collector Base Voltage (VCBO)
    70V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 100μA, 1mA
  • Current - Collector (Ic) (Max)
    30mA
  • Collector Emitter Voltage (VCEO)
    60V
  • Current - Collector Cutoff (Max)
    10μA ICBO
  • Collector Emitter Breakdown Voltage
    60V
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    300 @ 1mA 5V
  • Voltage - Collector Emitter Breakdown (Max)
    60V

Environmental & Export Classifications

  • HTSUS
    8541.29.0075
  • RoHS Status
    RoHS non-compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

SHIPPING GUIDE

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