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2SB1316TL

  • In Stock: 35000
  • Available: 218624

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.28800US $0.29
10+US $0.19200US $1.92
30+US $0.14400US $4.32
100+US $0.11520US $11.52
500+US $0.10560US $52.80
1000+US $0.09600US $96.00

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Rohm Semiconductor
  • Manufacturer's Part #
    2SB1316TL
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - Bipolar (BJT) - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    5.5mm
  • Height
    2.3mm
  • Length
    6.5mm
  • Current
    2A
  • Voltage
    100V
  • hFE Min
    1000
  • HTS Code
    8541.29.00.75
  • Polarity
    PNP
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    3
  • Published
    2004
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    Other Transistors
  • Termination
    SMD/SMT
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • Current Rating
    -2A
  • Number of Pins
    3
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Case Connection
    COLLECTOR
  • Contact Plating
    Copper, Tin
  • Terminal Finish
    Tin/Copper (Sn98Cu2)
  • Transistor Type
    PNP - Darlington
  • Base Part Number
    2SB1316
  • Factory Lead Time
    20 Weeks
  • Power Dissipation
    1W
  • Additional Feature
    BUILT-IN BIAS RESISTOR
  • Number of Elements
    2
  • Voltage - Rated DC
    -100V
  • Radiation Hardening
    No
  • Transition Frequency
    50MHz
  • Element Configuration
    Single
  • Max Breakdown Voltage
    100V
  • Max Collector Current
    2A
  • Max Power Dissipation
    10W
  • Operating Temperature
    150°C TJ
  • Gain Bandwidth Product
    50MHz
  • Number of Terminations
    2
  • Transistor Application
    AMPLIFIER
  • Reflow Temperature-Max (s)
    10
  • Emitter Base Voltage (VEBO)
    8V
  • Transistor Element Material
    SILICON
  • Continuous Collector Current
    -2A
  • Collector Base Voltage (VCBO)
    100V
  • Peak Reflow Temperature (Cel)
    260
  • Vce Saturation (Max) @ Ib, Ic
    1.5V @ 1mA, 1A
  • Collector Emitter Voltage (VCEO)
    100V
  • Current - Collector Cutoff (Max)
    10μA ICBO
  • Collector Emitter Breakdown Voltage
    100V
  • Collector Emitter Saturation Voltage
    1.5V
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    1000 @ 1A 2V

Environmental & Export Classifications

  • HTSUS
    8541.29.0075
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PSSO-G2
  • JESD-609 Code
    e2
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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