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A3PE600-1PQ208

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  • esd
  • as
  • iso14001
  • iso9001
  • D&B
  • Description
  • Alternatives
  • Shopping Guide
Description
General DescriptionProASIC3E, the third-generation family of Microsemi flash FPGAs, offers performance, density, and features beyond those of the ProASICPLUS® family. Nonvolatile flash technology gives ProASIC3E devices the advantage of being a secure, low power, single-chip solution that is Instant On. ProASIC3E is reprogrammable and offers time-to-market benefits at an ASIC-level unit cost.
These features enable designers to create high-density systems using existing ASIC or FPGA design flows and tools.
Features and BenefitsHigh Capacity
• 600 k to 3 Million System Gates
• 108 to 504 kbits of True Dual-Port SRAM
• Up to 620 User I/OsReprogrammable Flash Technology
• 130-nm, 7-Layer Metal (6 Copper), Flash-Based CMOS Process
• Instant On Level 0 Support
• Single-Chip Solution
• Retains Programmed Design when Powered OffOn-Chip User Nonvolatile Memory
• 1 kbit of FlashROM with Synchronous InterfacingHigh Performance
• 350 MHz System Performance
• 3.3 V, 66 MHz 64-Bit PCIIn-System Programming (ISP) and Security
• ISP Using On-Chip 128-Bit Advanced Encryption Standard (AES) Decryption via JTAG (IEEE 1532–compliant)
• FlashLock® Designed to Secure FPGA ContentsLow Power
• Core Voltage for Low Power
• Support for 1.5-V-Only Systems
• Low-Impedance Flash SwitchesHigh-Performance Routing Hierarchy
• Segmented, Hierarchical Routing and Clock Structure
• Ultra-Fast Local and Long-Line Network
• Enhanced High-Speed, Very-Long-Line Network
• High-Performance, Low-Skew Global Network
• Architecture Supports Ultra-High UtilizationPro (Professional) I/O
• 700 Mbps DDR, LVDS-Capable I/Os
• 1.5 V, 1.8 V, 2.5 V, and 3.3 V Mixed-Voltage Operation
• Bank-Selectable I/O Voltages—up to 8 Banks per Chip
• Single-Ended I/O Standards: LVTTL, LVCMOS 3.3 V / 2.5 V / 1.8 V / 1.5 V, 3.3 V PCI / 3.3 V PCI-X, and LVCMOS 2.5 V / 5.0 V Input
• Differential I/O Standards: LVPECL, LVDS, B-LVDS, and M-LVDS
• Voltage-Referenced I/O Standards: GTL+ 2.5 V / 3.3 V, GTL 2.5 V / 3.3 V, HSTL Class I and II, SSTL2 Class I and II, SSTL3 Class I and II
• I/O Registers on Input, Output, and Enable Paths
• Hot-Swappable and Cold Sparing I/Os
• Programmable Output Slew Rate and Drive Strength
• Programmable Input Delay
• Schmitt Trigger Option on Single-Ended Inputs
• Weak Pull-Up/-Down
• IEEE 1149.1 (JTAG) Boundary Scan Test
• Pin-Compatible Packages across the ProASIC®3E FamilyClock Conditioning Circuit (CCC) and PLL
• Six CCC Blocks, Each with an Integrated PLL
• Configurable Phase-Shift, Multiply/Divide, Delay Capabilities and External Feedback
• Wide Input Frequency Range (1.5 MHz to 350 MHz)SRAMs and FIFOs
• Variable-Aspect-Ratio 4,608-Bit RAM Blocks (×1, ×2, ×4, ×9, and ×18 organizations available)
• True Dual-Port SRAM (except ×18)
• 24 SRAM and FIFO Configurations with Synchronous Operation up to 350 MHzARM® Processor Support in ProASIC3E FPGAs
• M1 ProASIC3E Devices—Cortex-M1 Soft Processor Available with or without Debug
Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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