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APT100GT60B2RG

  • In Stock: 9718
  • Available: 9718

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $27.73900US $27.74
10+US $20.80425US $208.04
30+US $18.03035US $540.91
100+US $15.94992US $1594.99
500+US $14.97906US $7489.53
1000+US $13.86950US $13869.50

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Microsemi
  • Manufacturer's Part #
    APT100GT60B2RG
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    Thunderbolt IGBT®
  • ECCN
    EAR99
  • Mount
    Through Hole
  • IGBT Type
    NPT
  • Packaging
    Tube
  • Pin Count
    3
  • Input Type
    Standard
  • Gate Charge
    460nC
  • Part Status
    Active
  • Power - Max
    500W
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Turn On Time
    115 ns
  • Mounting Type
    Through Hole
  • Number of Pins
    3
  • Package / Case
    TO-247-3 Variant
  • Test Condition
    400V, 100A, 4.3 Ω, 15V
  • Switching Energy
    3.25mJ (on), 3.125mJ (off)
  • Additional Feature
    HIGH RELIABILITY
  • Number of Elements
    1
  • Radiation Hardening
    No
  • Td (on/off) @ 25°C
    40ns/320ns
  • Element Configuration
    Single
  • Max Collector Current
    148A
  • Max Power Dissipation
    500W
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Number of Terminations
    3
  • Transistor Application
    POWER CONTROL
  • Vce(on) (Max) @ Vge, Ic
    2.5V @ 15V, 100A
  • Turn Off Time-Nom (toff)
    450 ns
  • Transistor Element Material
    SILICON
  • Gate-Emitter Thr Voltage-Max
    5V
  • Collector Emitter Voltage (VCEO)
    600V
  • Current - Collector Pulsed (Icm)
    300A
  • Collector Emitter Breakdown Voltage
    600V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • RoHS Status
    ROHS3 Compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

SHIPPING GUIDE

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