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APT200GN60B2G

  • Available: 33

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $34.63080US $34.63
10+US $25.97310US $259.73
30+US $22.51002US $675.30
100+US $19.91271US $1991.27
500+US $18.70063US $9350.32
1000+US $17.31540US $17315.40

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Microsemi
  • Manufacturer's Part #
    APT200GN60B2G
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Through Hole
  • IGBT Type
    Trench Field Stop
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Pin Count
    3
  • Published
    1999
  • Input Type
    Standard
  • Gate Charge
    1180nC
  • Part Status
    Active
  • Power - Max
    682W
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • JEDEC-95 Code
    TO-247AC
  • Mounting Type
    Through Hole
  • Number of Pins
    3
  • Package / Case
    TO-247-3
  • Test Condition
    400V, 200A, 1 Ω, 15V
  • Switching Energy
    13mJ (on), 11mJ (off)
  • Factory Lead Time
    24 Weeks
  • Turn On Delay Time
    50 ns
  • Radiation Hardening
    No
  • Td (on/off) @ 25°C
    50ns/560ns
  • Turn-Off Delay Time
    560 ns
  • Element Configuration
    Single
  • Max Collector Current
    283A
  • Max Power Dissipation
    682W
  • Operating Temperature
    -55°C~175°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Number of Terminations
    3
  • Vce(on) (Max) @ Vge, Ic
    1.85V @ 15V, 200A
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    6.5V
  • Collector Emitter Voltage (VCEO)
    600V
  • Current - Collector Pulsed (Icm)
    600A
  • Collector Emitter Breakdown Voltage
    600V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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