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APT36GA60BD15

  • In Stock: 10749
  • Available: 12

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $9.39802US $9.40
10+US $8.45822US $84.58
30+US $6.57861US $197.36
100+US $5.40386US $540.39
500+US $5.16891US $2584.46
1000+US $4.69901US $4699.01

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Product Parameter

  • Manufacturer
    Microsemi
  • Manufacturer's Part #
    APT36GA60BD15
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    POWER MOS 8™
  • ECCN
    EAR99
  • Mount
    Through Hole
  • IGBT Type
    PT
  • Packaging
    Tube
  • Pin Count
    3
  • Published
    1999
  • Input Type
    Standard
  • Gate Charge
    18nC
  • Part Status
    Active
  • Power - Max
    290W
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Turn On Time
    29 ns
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Test Condition
    400V, 20A, 10 Ω, 15V
  • Case Connection
    COLLECTOR
  • Switching Energy
    307μJ (on), 254μJ (off)
  • Factory Lead Time
    29 Weeks
  • Additional Feature
    LOW CONDUCTION LOSS
  • Number of Elements
    1
  • Radiation Hardening
    No
  • Td (on/off) @ 25°C
    16ns/122ns
  • Element Configuration
    Single
  • Max Collector Current
    65A
  • Max Power Dissipation
    290W
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Number of Terminations
    3
  • Transistor Application
    POWER CONTROL
  • Vce(on) (Max) @ Vge, Ic
    2.5V @ 15V, 20A
  • Gate-Emitter Voltage-Max
    30V
  • Turn Off Time-Nom (toff)
    262 ns
  • Transistor Element Material
    SILICON
  • Gate-Emitter Thr Voltage-Max
    6V
  • Collector Emitter Voltage (VCEO)
    600V
  • Current - Collector Pulsed (Icm)
    109A
  • Collector Emitter Breakdown Voltage
    600V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PSFM-T3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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