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AS6C6264A-70SCNTR

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  • esd
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Description

The AS6C6264A is a static RAM manufactured using a CMOS process technology with the following operating modes: - Read - Standby - Write - Data Retention
The memory array is based on a 6-transistor cell.
FEATURES  8192 x 8 bit static CMOS RAM  70 ns Access Times  Common data inputs and outputs Three-state outputs  Typ. operating supply current o 70 ns: 10 mA Standby current: o< 2 μA at Ta ≤ 70 °C  Data retention current at 2 V: o< 1 μA at Ta ≤ 70 °C TTL/CMOS-compatible Automatic reduction of power dissipation in long Read or Write cycles Power supply voltage 5 V Operating temperature ranges: o 0 to 70 °C o -40 to 85 °C  ESD protection > 2000 V (MIL STD 883C M3015.7)  Latch-up immunity > 100 mA  Packages: PDIP28 (600 mil) SOP28 (330 mil)
Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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