ASDM40N60KQ-R

The ASDM40N60KQ-R is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Ascend. This component is designed for applications requiring efficient power management and switching capabilities, making it suitable for various industrial and consumer electronics applications.

Key Features:

1. Voltage Rating: The ASDM40N60KQ-R has a maximum drain-source voltage (V_DS) of 600 volts, allowing it to handle high-voltage applications effectively.

2. Current Rating: It can support a continuous drain current (I_D) of up to 40 amperes, making it capable of managing significant power loads.

3. R_DS(on): The on-resistance (R_DS(on)) is low, typically around 0.15 ohms at a gate-source voltage (V_GS) of 10 volts. This low resistance minimizes power loss during operation, enhancing efficiency.

4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically in the range of 2 to 4 volts, which allows for easy interfacing with standard logic levels.

5. Package Type: The ASDM40N60KQ-R is housed in a TO-220 package, which provides excellent thermal performance and allows for easy mounting on heatsinks for effective heat dissipation.

6. Switching Speed: This MOSFET features fast switching capabilities, making it suitable for high-frequency applications, such as inverters and converters.

7. Thermal Characteristics: With a maximum junction temperature (T_J) of 150 degrees Celsius, the ASDM40N60KQ-R is designed to operate reliably under high-temperature conditions.

8. Applications: Common applications include power supplies, motor drives, and other power management systems where high efficiency and reliability are critical.

Electrical Characteristics:

• Maximum Drain-Source Voltage (V_DS): 600V
• Continuous Drain Current (I_D): 40A
• Pulsed Drain Current (I_D,pulse): 160A
• Gate-Source Voltage (V_GS): ±20V
• Total Gate Charge (Q_g): Approximately 60 nC at V_GS = 10V

Conclusion:

The ASDM40N60KQ-R from Ascend is a robust and efficient N-channel MOSFET that is well-suited for high-voltage and high-current applications. Its combination of low on-resistance, high voltage rating, and fast switching capabilities makes it an excellent choice for engineers looking to optimize power management in their designs.