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ASDM40N80Q-R

  • In Stock: 175
  • Available: 7759

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.46800US $0.47
10+US $0.31200US $3.12
30+US $0.23400US $7.02
100+US $0.18720US $18.72
500+US $0.17160US $85.80
1000+US $0.15600US $156.00

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  • Description
  • Alternatives
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Description

The ASDM40N80Q-R is a high-performance power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Ascend. This device is designed for applications requiring efficient power management and high voltage handling.

Key Features:

  1. Voltage Rating: The ASDM40N80Q-R has a maximum drain-source voltage (V_DS) of 800 volts, making it suitable for high-voltage applications such as power supplies, motor drives, and industrial equipment.

  2. Current Rating: It can handle a continuous drain current (I_D) of up to 40 amperes, which allows it to manage significant power loads effectively.

  3. R_DS(on): The on-resistance (R_DS(on)) is low, typically around 0.4 ohms at a gate-source voltage (V_GS) of 10 volts. This low resistance minimizes power loss during operation, enhancing overall efficiency.

  4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically in the range of 2 to 4 volts, allowing for easy drive with standard logic levels.

  5. Package Type: The ASDM40N80Q-R is housed in a TO-220 package, which provides excellent thermal performance and allows for easy mounting on heatsinks for effective heat dissipation.

  6. Thermal Characteristics: With a maximum junction temperature (T_J) of 150°C, the device is designed to operate reliably under high-temperature conditions, making it suitable for demanding environments.

  7. Switching Performance: The device features fast switching capabilities, which are essential for applications in switch-mode power supplies (SMPS) and other high-frequency circuits.

  8. Applications: The ASDM40N80Q-R is ideal for use in various applications, including:

    • Power converters
    • Inverters
    • Motor control circuits
    • Lighting control systems
    • Battery management systems

Electrical Characteristics:

  • Gate-Source Voltage (V_GS): ±20V
  • Maximum Power Dissipation (P_D): Typically around 94 watts, depending on the thermal management.
  • Capacitance: The input capacitance (C_iss) is relatively low, which contributes to its fast switching performance.

Reliability and Compliance:

The ASDM40N80Q-R is designed to meet stringent reliability standards, making it suitable for industrial applications where durability and long-term performance are critical. It is compliant with RoHS regulations, ensuring that it is free from hazardous substances.

Conclusion:

The ASDM40N80Q-R from Ascend is a robust and efficient power MOSFET that combines high voltage and current ratings with low on-resistance and excellent thermal performance. Its versatility makes it a preferred choice for engineers looking to design reliable and efficient power electronic systems.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

SHIPPING GUIDE

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