AT25DF081A-SH-B

AT25DF081A-SH-B Description   AT25DF081A-SH-B is a 1M×8 NOR flash memory with flexible erasing architecture and an erasing granularity as small as 4k bytes.
The AT25DF081A-SH-B is suitable for data storage without any additional data storage EEPROM equipment and is designed for use in a variety of high-volume consumer applications.   AT25DF081A-SH-B
Features  
• Single 2.7V - 3.6V Supply
• Serial Peripheral Interface (SPI) Compatible– Supports SPI Modes 0 and 3– Supports RapidS™ Operation– Supports Dual-Input Program and Dual-Output Read
• Very High Operating Frequencies– 100MHz for RapidS– 85MHz for SPI– Clock-to-Output (tV) of 5ns Maximum
• Flexible, Optimized Erase Architecture for Code + Data Storage Applications– Uniform 4-Kbyte Block Erase– Uniform 32-Kbyte Block Erase– Uniform 64-Kbyte Block Erase– Full Chip Erase
• Individual Sector Protection with Global Protect/Unprotect Feature– 16 Sectors of 64-Kbytes Each
• Hardware Controlled Locking of Protected Sectors via WP Pin
• Sector Lockdown– Make Any Combination of 64-Kbyte Sectors Permanently Read-Only
• 128-Byte Programmable OTP Security Register
• Flexible Programming– Byte/Page Program (1- to 256-Bytes)
• Fast Program and Erase Times– 1.0ms Typical Page Program (256 Bytes) Time– 50ms Typical 4-Kbyte Block Erase Time– 250ms Typical 32-Kbyte Block Erase Time– 400ms Typical 64-Kbyte Block Erase Time
• Automatic Checking and Reporting of Erase/Program Failures
• Software Controlled Reset
• JEDEC Standard Manufacturer and Device ID Read Methodology
• Low Power Dissipation– 5mA Active Read Current (Typical at 20MHz)– 5µA Deep Power-Down Current (Typical)
• Endurance: 100,000 Program/Erase Cycles
• Data Retention: 20 Years
• Complies with Full Industrial Temperature Range
• Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options– 8-lead SOIC (150-mil and 208-mil wide)– 8-pad Ultra Thin DFN (5 x 6 x 0.6mm)   AT25DF081A-SH-B Applications  
• Communication
• Industry
• Car
• Smart grid space