AT25SF161-SSHD-T
- Manufacturer’s Part#:AT25SF161-SSHD-T
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- Description:IC FLASH 16M SPI 104MHZ 8SOIC
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- In Stock: 61000
- Available: 247331
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.76340 | US $2.76 |
10+ | US $2.48706 | US $24.87 |
30+ | US $1.93438 | US $58.03 |
100+ | US $1.58895 | US $158.90 |
500+ | US $1.51987 | US $759.94 |
1000+ | US $1.38170 | US $1381.70 |
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- Description
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- Shopping Guide
The AT25SF161-SSHD-T is a 16Mbit (2M x 8) Serial Flash memory device from Renesas Electronics. It is a high-performance, low-power SPI flash memory device that is well-suited for a wide variety of applications, including embedded systems, industrial control, and consumer electronics.
Here are some of the key features of the AT25SF161-SSHD-T:
- 3.3V single-supply operation
- 104MHz Quad SPI clock rate
- 4-wire Quad SPI mode for faster data transfer rates
- Dual and Single SPI modes
- 8-pin SOIC package
- 8ns access time
- 40MHz SPI clock rate
- 10,000 erase cycles
- 100,000 write cycles
- 20 years data retention at 85°C/100 years data retention at 25°C
- JTAG interface for on-chip debugging
- Operating voltage: 2.7V to 3.6V
- Operating temperature range: -40°C to +85°C
The AT25SF161-SSHD-T is a popular choice for applications that require high-performance, low-power SPI flash memory. It is a good choice for applications that require fast data transfer rates, such as data loggers and digital cameras.
Here are some of the reasons why the AT25SF161-SSHD-T is so popular:
- It is a high-performance SPI flash memory device with a fast Quad SPI mode
- It is a low-power SPI flash memory device with a low operating voltage
- It is a versatile SPI flash memory device with support for Dual and Single SPI modes
- It is a reliable SPI flash memory device with a long data retention
If you are looking for a high-performance, low-power SPI flash memory device, the AT25SF161-SSHD-T is a great option.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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