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AT45DB161E-SSHD-B

  • In Stock: 1000
  • Available: 43097

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $1.76700US $1.77
10+US $1.17800US $11.78
30+US $0.88350US $26.51
100+US $0.70680US $70.68
500+US $0.64790US $323.95
1000+US $0.58900US $589.00

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Description
Description
The Adesto® AT45DB161E is a 2.3V or 2.5V minimum, serial-interface sequential access Flash memory ideally suited for a wide variety of digital voice, image, program code, and data storage applications.
The AT45DB161E also supports the RapidS serial interface for applications requiring very high speed operation. Its 17,301,504 bits of memory are organized as 4,096 pages of 512 bytes or 528 bytes each. In addition to the main memory, the AT45DB161E also contains two SRAM buffers of 512/528 bytes each. 
Features Single 2.3V - 3.6V or 2.5V - 3.6V supplySerial Peripheral Interface (SPI) compatibleSupports SPI modes 0 and 3Supports RapidS™ operationContinuous read capability through entire arrayUp to 85MHzLow-power read option up to 15MHzClock-to-output time (tV) of 6ns maximumUser configurable page size512 bytes per page528 bytes per page (default)Page size can be factory pre-configured for 512 bytesTwo fully independent SRAM data buffers (512/528 bytes)Allows receiving data while reprogramming the main memory arrayFlexible programming optionsByte/Page Program (1 to 512/528 bytes) directly into main memoryBuffer WriteBuffer to Main Memory Page ProgramFlexible erase optionsPage Erase (512/528 bytes)Block Erase (4KB)Sector Erase (128KB)Chip Erase (16-Mbits)Program and Erase Suspend/ResumeAdvanced hardware and software data protection featuresIndividual sector protectionIndividual sector lockdown to make any sector permanently read-only128-byte, One-Time Programmable (OTP) Security Register64 bytes factory programmed with a unique identifier64 bytes user programmableHardware and software controlled reset optionsJEDEC Standard Manufacturer and Device ID ReadLow-power dissipation400nA Ultra-Deep Power-Down current (typical)3µA Deep Power-Down current (typical)25µA Standby current (typical)7mA Active Read current (typical @ 15 MHz))Endurance: 100,000 program/erase cycles per page minimumData retention: 20 yearsComplies with full industrial temperature rangeGreen (Pb/Halide-free/RoHS compliant) packaging options8-lead SOIC (0.150" wide and 0.208" wide)8-pad Ultra-thin DFN (5 x 6 x 0.6mm)9-ball Ultra-thin UBGA (6 x 6 x 0.6mm)11-ball Wafer Level Chip Scale Package
Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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