AUIRFR3710Z
- Manufacturer’s Part#:AUIRFR3710Z
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- ECAD Model:
- Description:MOSFET N-CH 100V 42A DPAK
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 8815
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- Available: 8815
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part #AUIRFR3710Z
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width6.22mm
- Height2.39mm
- Length6.73mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTube
- Published2010
- Rise Time43ns
- Vgs (Max)±20V
- Resistance18MOhm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs2 V
- Part StatusDiscontinued
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- JEDEC-95 CodeTO-252AA
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
- Contact PlatingTin
- Fall Time (Typ)42 ns
- Factory Lead Time26 Weeks
- Power Dissipation140W
- Threshold Voltage2V
- Number of Elements1
- Turn On Delay Time14 ns
- Vgs(th) (Max) @ Id4V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time53 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max140W Tc
- Number of Terminations2
- Rds On (Max) @ Id, Vgs18m Ω @ 33A, 10V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs100nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)200 mJ
- Continuous Drain Current (ID)42A
- Pulsed Drain Current-Max (IDM)220A
- Drain to Source Breakdown Voltage100V
- Input Capacitance (Ciss) (Max) @ Vds2930pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C42A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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