AUIRFR8401
- Manufacturer’s Part#:AUIRFR8401
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- ECAD Model:
- Description:MOSFET N-CH 40V 100A DPAK
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 3395
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- Available: 3395
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part #AUIRFR8401
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width6.22mm
- Height2.39mm
- Length6.73mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTube
- Published2009
- Rise Time34ns
- Vgs (Max)±20V
- Rds On Max4.25 mΩ
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs2.2 V
- Part StatusDiscontinued
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Number of Pins3
- Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
- Contact PlatingTin
- Fall Time (Typ)24 ns
- Base Part NumberIRFR8401
- Factory Lead Time13 Weeks
- Input Capacitance2.2nF
- Power Dissipation79W
- Threshold Voltage3.9V
- Number of Channels1
- Number of Elements1
- Turn On Delay Time7.9 ns
- Vgs(th) (Max) @ Id3.9V @ 50μA
- Radiation HardeningNo
- Turn-Off Delay Time25 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max79W Tc
- Rds On (Max) @ Id, Vgs4.25mOhm @ 60A, 10V
- Supplier Device PackageD-Pak
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- Drain to Source Resistance4.25mOhm
- Gate Charge (Qg) (Max) @ Vgs63nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)100A
- Drain to Source Voltage (Vdss)40V
- Drain to Source Breakdown Voltage40V
- Input Capacitance (Ciss) (Max) @ Vds2200pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C100A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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