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AUIRGR4045DTRL

  • In Stock: 70637
  • Available: 70637

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.40976US $2.41
10+US $2.16878US $21.69
30+US $1.68683US $50.60
100+US $1.38561US $138.56
500+US $1.32537US $662.69
1000+US $1.20488US $1204.88

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part #
    AUIRGR4045DTRL
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • ECCN
    EAR99
  • IGBT Type
    Trench
  • Packaging
    Tape & Reel (TR)
  • Published
    2011
  • Input Type
    Standard
  • Gate Charge
    19.5nC
  • Part Status
    Obsolete
  • Power - Max
    77W
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Turn On Time
    38 ns
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • JEDEC-95 Code
    TO-252AA
  • Mounting Type
    Surface Mount
  • Rise Time-Max
    15ns
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Test Condition
    400V, 6A, 47 Ω, 15V
  • Case Connection
    COLLECTOR
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Base Part Number
    IRGR4045
  • Switching Energy
    56μJ (on), 122μJ (off)
  • Factory Lead Time
    13 Weeks
  • Terminal Position
    SINGLE
  • Fall Time-Max (tf)
    22ns
  • Number of Elements
    1
  • Td (on/off) @ 25°C
    27ns/75ns
  • Qualification Status
    Not Qualified
  • Operating Temperature
    -55°C~175°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Reach Compliance Code
    compliant
  • Reverse Recovery Time
    74ns
  • Number of Terminations
    2
  • Transistor Application
    POWER CONTROL
  • Vce(on) (Max) @ Vge, Ic
    2V @ 15V, 6A
  • Gate-Emitter Voltage-Max
    20V
  • Turn Off Time-Nom (toff)
    127 ns
  • Reflow Temperature-Max (s)
    30
  • Power Dissipation-Max (Abs)
    77W
  • Transistor Element Material
    SILICON
  • Gate-Emitter Thr Voltage-Max
    6.5V
  • Peak Reflow Temperature (Cel)
    260
  • Current - Collector (Ic) (Max)
    12A
  • Current - Collector Pulsed (Icm)
    18A
  • Voltage - Collector Emitter Breakdown (Max)
    600V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    RoHS Compliant
  • JESD-30 Code
    R-PSSO-G2
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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