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BAS70

  • In Stock: 38740
  • Available: 5403

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.05124US $0.05
10+US $0.03416US $0.34
30+US $0.02562US $0.77
100+US $0.02050US $2.05
500+US $0.01879US $9.40
1000+US $0.01708US $17.08

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Quick RFQ
  • Description
  • Alternatives
  • Shopping Guide
Description

The BAS70 is a small-signal Schottky barrier diode manufactured by Diodes Incorporated. It is designed for high-speed switching applications and is particularly well-suited for use in RF (radio frequency) and microwave circuits. Here’s a detailed description of its key features and specifications:

Package and Physical Characteristics:

  • Package Type: The BAS70 is typically available in a SOT-23 package, which is a compact, surface-mount package that allows for efficient use of PCB space.
  • Dimensions: The SOT-23 package generally measures approximately 2.9 mm x 1.3 mm x 1.1 mm, making it suitable for applications where space is a premium.
  • Weight: The diode is lightweight, contributing to the overall efficiency of the circuit design.

Electrical Characteristics:

  • Forward Voltage Drop (Vf): The forward voltage drop is low, typically around 0.3V at a forward current of 1 mA, which helps in minimizing power loss during operation.
  • Reverse Voltage (Vr): The BAS70 has a maximum reverse voltage rating of about 30V, making it suitable for various applications without the risk of breakdown.
  • Forward Current (If): The maximum forward current rating is around 200 mA, allowing it to handle moderate current levels in switching applications.
  • Capacitance: The diode exhibits low junction capacitance, typically around 1 pF at a reverse voltage of 0V, which is beneficial for high-frequency applications.

Performance Characteristics:

  • Switching Speed: The BAS70 is known for its fast switching capabilities, making it ideal for high-speed applications such as signal detection and RF mixing.
  • Temperature Range: The operating temperature range is typically from -55°C to +125°C, allowing it to function reliably in a variety of environmental conditions.
  • Leakage Current: The reverse leakage current is low, typically in the nanoamp range, which is advantageous for battery-operated devices and low-power applications.

Applications:

The BAS70 is commonly used in:

  • RF Applications: As a mixer or detector in RF circuits due to its fast response time and low capacitance.
  • Signal Clipping: In signal processing circuits to clip or limit voltage levels.
  • Rectification: In low-voltage rectification applications where efficiency is critical.
  • Switching Circuits: In various electronic devices for fast switching operations.

Summary:

The BAS70 from Diodes Incorporated is a versatile Schottky diode that combines compact size, low forward voltage drop, and high-speed performance, making it an excellent choice for a wide range of electronic applications, particularly in RF and high-frequency circuits. Its robust specifications and reliability make it a popular choice among engineers and designers in the electronics industry.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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