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BCP52-16,115

  • In Stock: 30000
  • Available: 1795

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.07636US $2.08
10+US $1.38424US $13.84
30+US $1.03818US $31.15
100+US $0.83054US $83.05
500+US $0.76133US $380.66
1000+US $0.69212US $692.12

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Quick RFQ
  • Description
  • Alternatives
  • Shopping Guide
Description

The BCP52-16,115 is a high-performance NPN bipolar junction transistor (BJT) manufactured by Nexperia, designed for a variety of general-purpose applications. This transistor is particularly well-suited for use in low to medium power switching and amplification tasks.

Key Features:

  1. Type: NPN Transistor
  2. Package: Typically available in a TO-92 package, which is a cylindrical plastic housing that allows for easy handling and mounting on printed circuit boards (PCBs).
  3. Maximum Collector-Emitter Voltage (Vce): The BCP52 can handle a maximum Vce of 45V, making it suitable for applications that require moderate voltage levels.
  4. Maximum Collector Current (Ic): It can support a continuous collector current of up to 1.5A, allowing it to drive loads effectively in various circuits.
  5. DC Current Gain (hFE): The transistor exhibits a high DC current gain, typically ranging from 100 to 300, which enhances its efficiency in amplification applications.
  6. Transition Frequency (fT): The BCP52 has a transition frequency of around 150 MHz, making it suitable for high-frequency applications as well.
  7. Thermal Characteristics: It has a maximum junction temperature of 150°C, which provides a good thermal margin for reliable operation in various environments.

Applications:

  • Switching Circuits: The BCP52 is commonly used in switching applications, such as driving relays, motors, and other inductive loads.
  • Amplification: It is also utilized in audio and RF amplification circuits due to its favorable gain characteristics.
  • Signal Processing: The transistor can be employed in signal processing applications where linearity and frequency response are critical.

Electrical Characteristics:

  • Collector-Base Breakdown Voltage (V(BR)CBO): Typically around 45V, ensuring robust performance in high-voltage scenarios.
  • Emitter-Base Breakdown Voltage (V(BR)EBO): Generally around 5V, which is important for protecting the transistor from reverse bias conditions.
  • Power Dissipation (Ptot): The maximum power dissipation is around 625 mW, which indicates how much power the transistor can handle without overheating.

Conclusion:

The BCP52-16,115 from Nexperia is a versatile and reliable NPN transistor that is well-suited for a wide range of electronic applications. Its combination of high voltage and current ratings, along with good gain and frequency response, makes it a popular choice among engineers and hobbyists alike for both switching and amplification tasks.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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