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BSP315PH6327XTSA1

  • In Stock: 19000
  • Available: 255780

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $7.27000US $7.27
10+US $6.54300US $65.43
30+US $5.08900US $152.67
100+US $4.18025US $418.03
500+US $3.99850US $1999.25
1000+US $3.63500US $3635.00

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part #
    BSP315PH6327XTSA1
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    SIPMOS®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    6.7mm
  • Height
    1.8mm
  • Length
    6.5mm
  • FET Type
    P-Channel
  • Lead Free
    Lead Free
  • Packaging
    Cut Tape (CT)
  • Pin Count
    4
  • Published
    1999
  • Rise Time
    9ns
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Nominal Vgs
    -1.5 V
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    Other Transistors
  • Termination
    SMD/SMT
  • Halogen Free
    Halogen Free
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Recovery Time
    46 ns
  • Terminal Form
    GULL WING
  • Number of Pins
    4
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-261-4, TO-261AA
  • Case Connection
    DRAIN
  • Contact Plating
    Tin
  • Fall Time (Typ)
    19 ns
  • Factory Lead Time
    10 Weeks
  • Power Dissipation
    1.8W
  • Terminal Position
    DUAL
  • Threshold Voltage
    -1.5V
  • Additional Feature
    LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
  • Number of Channels
    1
  • Number of Elements
    1
  • Turn On Delay Time
    24 ns
  • Vgs(th) (Max) @ Id
    2V @ 160μA
  • Dual Supply Voltage
    -60V
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    32 ns
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~150°C TJ
  • Power Dissipation-Max
    1.8W Ta
  • Number of Terminations
    4
  • Rds On (Max) @ Id, Vgs
    800m Ω @ 1.17A, 10V
  • Max Dual Supply Voltage
    -60V
  • Reflow Temperature-Max (s)
    40
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    7.8nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Continuous Drain Current (ID)
    1.17A
  • Max Junction Temperature (Tj)
    150°C
  • Peak Reflow Temperature (Cel)
    260
  • Drain to Source Voltage (Vdss)
    60V
  • Drain-source On Resistance-Max
    0.8Ohm
  • Manufacturer Package Identifier
    PG-SOT223-4
  • Drain to Source Breakdown Voltage
    -60V
  • Input Capacitance (Ciss) (Max) @ Vds
    160pF @ 25V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Current - Continuous Drain (Id) @ 25°C
    1.17A Ta

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

SHIPPING GUIDE

  • Shipping Methods

    Rest assured that your orders will be handled by these trusted providers, such as DHL, FedEx, SF, and UPS.

  • Shipping Cost

    Shipping starts at $40 but varies for destinations like South Africa, Brazil, India, and more. The actual shipping charges depend on time zone, country, and package weight/volume.

  • Delivery Time

    We ship orders once daily, around 5 p.m., except on Sundays. The estimated delivery time may vary depending on the courier service you choose, but typically ranges from 5 to 7 business days.

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