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BSS138W-7-F

  • In Stock: 60000
  • Available: 1113349

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.05526US $0.06
10+US $0.03684US $0.37
30+US $0.02763US $0.83
100+US $0.02210US $2.21
500+US $0.02026US $10.13
1000+US $0.01842US $18.42

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Diodes Incorporated
  • Manufacturer's Part #
    BSS138W-7-F
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    1.35mm
  • Height
    1mm
  • Length
    2.2mm
  • Weight
    6.010099mg
  • Current
    2A
  • Voltage
    50V
  • FET Type
    N-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    3
  • Published
    2008
  • Vgs (Max)
    ±20V
  • Resistance
    3.5Ohm
  • Technology
    MOSFET (Metal Oxide)
  • Nominal Vgs
    1.2 V
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    FET General Purpose Powers
  • Termination
    SMD/SMT
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • Current Rating
    200mA
  • Number of Pins
    3
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    SC-70, SOT-323
  • Contact Plating
    Tin
  • Factory Lead Time
    16 Weeks
  • Power Dissipation
    200mW
  • Terminal Position
    DUAL
  • Threshold Voltage
    1.2V
  • Additional Feature
    LOW THRESHOLD
  • Number of Channels
    1
  • Number of Elements
    1
  • Turn On Delay Time
    20 ns
  • Vgs(th) (Max) @ Id
    1.5V @ 250μA
  • Voltage - Rated DC
    50V
  • Dual Supply Voltage
    50V
  • Turn-Off Delay Time
    20 ns
  • Qualification Status
    Not Qualified
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~150°C TJ
  • Power Dissipation-Max
    200mW Ta
  • Number of Terminations
    3
  • Rds On (Max) @ Id, Vgs
    3.5 Ω @ 220mA, 10V
  • Transistor Application
    SWITCHING
  • Feedback Cap-Max (Crss)
    8 pF
  • Reflow Temperature-Max (s)
    40
  • Transistor Element Material
    SILICON
  • Gate to Source Voltage (Vgs)
    20V
  • Continuous Drain Current (ID)
    200mA
  • Peak Reflow Temperature (Cel)
    260
  • Drain to Source Breakdown Voltage
    75V
  • Input Capacitance (Ciss) (Max) @ Vds
    50pF @ 10V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Current - Continuous Drain (Id) @ 25°C
    200mA Ta

Environmental & Export Classifications

  • HTSUS
    8541.21.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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