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1+US $0.27900US $0.28
10+US $0.18600US $1.86
30+US $0.13950US $4.19
100+US $0.11160US $11.16
500+US $0.10230US $51.15
1000+US $0.09300US $93.00

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The BSS169H6327XTSA1 is a N-channel enhancement mode field-effect transistor (FET) manufactured by Infineon Technologies. It is designed for general-purpose switching applications in various electronic circuits, offering high performance and reliability.

Key Features:

  1. Enhancement Mode: The BSS169H6327XTSA1 operates in the enhancement mode, which means it requires a positive voltage applied to the gate terminal to allow current flow between the source and drain terminals. This mode of operation simplifies circuit design and ensures low power consumption when the transistor is off.
  2. Low On-State Resistance: With a low on-state resistance (RDS(ON)), this transistor minimizes power dissipation and voltage drop across the device when it is conducting. This feature enables efficient power management and helps to reduce losses in switching circuits.
  3. High Switching Speed: The BSS169H6327XTSA1 offers fast switching times, allowing for rapid transitions between on and off states. This characteristic is essential for applications requiring high-speed switching, such as switching power supplies, motor control circuits, and LED drivers.
  4. Low Threshold Voltage: It has a low threshold voltage (VGS(th)), which determines the gate-source voltage required to turn the transistor on. A low threshold voltage ensures compatibility with low-voltage control signals and enables the transistor to operate efficiently in low-power applications.
  5. High Voltage Capability: This transistor can withstand relatively high drain-source voltage (VDS) levels, making it suitable for use in circuits where high voltage ratings are required. It provides robust performance and reliable operation in demanding applications.
  6. Small Form Factor: The BSS169H6327XTSA1 is available in a small surface-mount package, allowing for compact and space-efficient circuit designs. Its small form factor is advantageous in applications where board space is limited or where miniaturization is desired.


  • Switching circuits
  • Power management
  • LED lighting
  • Battery management systems
  • Motor control
  • Audio amplifiers
  • Interface circuits
  • Voltage regulators

The BSS169H6327XTSA1 transistor from Infineon Technologies is a versatile and reliable component suitable for a wide range of switching applications. With its enhancement mode operation, low on-state resistance, high switching speed, low threshold voltage, high voltage capability, and small form factor, it provides engineers with an excellent solution for achieving efficient and high-performance circuit designs.




Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.


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