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CSD13302W

  • In Stock: 10000
  • Available: 3000

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.34440US $0.34
10+US $0.22960US $2.30
30+US $0.17220US $5.17
100+US $0.13776US $13.78
500+US $0.12628US $63.14
1000+US $0.11480US $114.80

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Product Parameter

  • Manufacturer
    Texas
  • Manufacturer's Part #
    CSD13302W
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    NexFET™
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    0m
  • Height
    625μm
  • Length
    0m
  • FET Type
    N-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Rise Time
    7ns
  • Thickness
    650μm
  • Vgs (Max)
    ±10V
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Active
  • Pbfree Code
    yes
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    BALL
  • Number of Pins
    4
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    4-UFBGA, DSBGA
  • Contact Plating
    Copper, Silver, Tin
  • Fall Time (Typ)
    7 ns
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Base Part Number
    CSD13302
  • Lifecycle Status
    ACTIVE (Last Updated: 6 days ago)
  • Factory Lead Time
    6 Weeks
  • Terminal Position
    BOTTOM
  • Additional Feature
    ULTRA LOW RESISTANCE
  • Number of Elements
    1
  • Turn On Delay Time
    6 ns
  • Vgs(th) (Max) @ Id
    1.3V @ 250μA
  • Turn-Off Delay Time
    17 ns
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~150°C TJ
  • Power Dissipation-Max
    1.8W Ta
  • Number of Terminations
    4
  • Rds On (Max) @ Id, Vgs
    17.1m Ω @ 1A, 4.5V
  • Transistor Application
    SWITCHING
  • Feedback Cap-Max (Crss)
    196 pF
  • DS Breakdown Voltage-Min
    12V
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    7.8nC @ 4.5V
  • Gate to Source Voltage (Vgs)
    10V
  • Continuous Drain Current (ID)
    1.6A
  • Drain to Source Voltage (Vdss)
    12V
  • Drain-source On Resistance-Max
    0.0285Ohm
  • Pulsed Drain Current-Max (IDM)
    29A
  • Input Capacitance (Ciss) (Max) @ Vds
    862pF @ 6V
  • Drive Voltage (Max Rds On,Min Rds On)
    2.5V 4.5V
  • Current - Continuous Drain (Id) @ 25°C
    1.6A Ta

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e1
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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