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CSD16301Q2

  • In Stock: 18600
  • Available: 502802

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.28080US $0.28
10+US $0.18720US $1.87
30+US $0.14040US $4.21
100+US $0.11232US $11.23
500+US $0.10296US $51.48
1000+US $0.09360US $93.60

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Texas
  • Manufacturer's Part #
    CSD16301Q2
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    NexFET™
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    2mm
  • Height
    800μm
  • Length
    2mm
  • FET Type
    N-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    6
  • Rise Time
    4.4ns
  • Thickness
    750μm
  • Vgs (Max)
    +10V, -8V
  • Technology
    MOSFET (Metal Oxide)
  • Nominal Vgs
    1.2 V
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    FET General Purpose Power
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Number of Pins
    6
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    6-SMD, Flat Leads
  • Case Connection
    DRAIN
  • Contact Plating
    Tin
  • Fall Time (Typ)
    1.7 ns
  • Terminal Finish
    Nickel/Palladium/Gold (Ni/Pd/Au)
  • Base Part Number
    CSD16301
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    6 Weeks
  • Power Dissipation
    2.3W
  • Terminal Position
    DUAL
  • Threshold Voltage
    1.2V
  • Number of Channels
    1
  • Number of Elements
    1
  • Turn On Delay Time
    2.7 ns
  • Vgs(th) (Max) @ Id
    1.55V @ 250μA
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    4.1 ns
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~150°C TJ
  • Power Dissipation-Max
    2.3W Ta
  • Number of Terminations
    6
  • Rds On (Max) @ Id, Vgs
    24m Ω @ 4A, 8V
  • Transistor Application
    SWITCHING
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    5A
  • Gate Charge (Qg) (Max) @ Vgs
    2.8nC @ 4.5V
  • Gate to Source Voltage (Vgs)
    10V
  • Continuous Drain Current (ID)
    5A
  • Max Junction Temperature (Tj)
    150°C
  • Peak Reflow Temperature (Cel)
    260
  • Drain-source On Resistance-Max
    0.034Ohm
  • Pulsed Drain Current-Max (IDM)
    20A
  • Drain to Source Breakdown Voltage
    25V
  • Input Capacitance (Ciss) (Max) @ Vds
    340pF @ 12.5V
  • Drive Voltage (Max Rds On,Min Rds On)
    3V 8V
  • Current - Continuous Drain (Id) @ 25°C
    5A Tc

Environmental & Export Classifications

  • HTSUS
    8541.21.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e4
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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