CSD16301Q2
- Manufacturer’s Part#:CSD16301Q2
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:NexFET™
- ECAD Model:
- Description:MOSFET N-CH 25V 6-SON
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 33000
- Available: 502802
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.26400 | US $0.26 |
10+ | US $0.17600 | US $1.76 |
30+ | US $0.13200 | US $3.96 |
100+ | US $0.10560 | US $10.56 |
500+ | US $0.09680 | US $48.40 |
1000+ | US $0.08800 | US $88.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerTexas
- Manufacturer's Part #CSD16301Q2
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesNexFET™
- ECCNEAR99
- MountSurface Mount
- Width2mm
- Height800μm
- Length2mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count6
- Rise Time4.4ns
- Thickness750μm
- Vgs (Max)+10V, -8V
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs1.2 V
- Part StatusActive
- Pbfree Codeyes
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Number of Pins6
- Operating ModeENHANCEMENT MODE
- Package / Case6-SMD, Flat Leads
- Case ConnectionDRAIN
- Contact PlatingTin
- Fall Time (Typ)1.7 ns
- Terminal FinishNickel/Palladium/Gold (Ni/Pd/Au)
- Base Part NumberCSD16301
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time6 Weeks
- Power Dissipation2.3W
- Terminal PositionDUAL
- Threshold Voltage1.2V
- Number of Channels1
- Number of Elements1
- Turn On Delay Time2.7 ns
- Vgs(th) (Max) @ Id1.55V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time4.1 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max2.3W Ta
- Number of Terminations6
- Rds On (Max) @ Id, Vgs24m Ω @ 4A, 8V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)5A
- Gate Charge (Qg) (Max) @ Vgs2.8nC @ 4.5V
- Gate to Source Voltage (Vgs)10V
- Continuous Drain Current (ID)5A
- Max Junction Temperature (Tj)150°C
- Peak Reflow Temperature (Cel)260
- Drain-source On Resistance-Max0.034Ohm
- Pulsed Drain Current-Max (IDM)20A
- Drain to Source Breakdown Voltage25V
- Input Capacitance (Ciss) (Max) @ Vds340pF @ 12.5V
- Drive Voltage (Max Rds On,Min Rds On)3V 8V
- Current - Continuous Drain (Id) @ 25°C5A Tc
Environmental & Export Classifications
- HTSUS8541.21.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee4
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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