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CSD17308Q3

  • In Stock: 11000
  • Available: 295859

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.73944US $0.74
10+US $0.49296US $4.93
30+US $0.36972US $11.09
100+US $0.29578US $29.58
500+US $0.27113US $135.57
1000+US $0.24648US $246.48

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Texas
  • Manufacturer's Part #
    CSD17308Q3
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    NexFET™
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    3.3mm
  • Height
    1.1mm
  • Length
    3.3mm
  • FET Type
    N-Channel
  • Lead Free
    Contains Lead
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    8
  • Rise Time
    5.7ns
  • Thickness
    1mm
  • Vgs (Max)
    +10V, -8V
  • Technology
    MOSFET (Metal Oxide)
  • Nominal Vgs
    1.3 V
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    FET General Purpose Power
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-PowerTDFN
  • Case Connection
    DRAIN
  • Contact Plating
    Tin
  • Fall Time (Typ)
    2.3 ns
  • Base Part Number
    CSD17308
  • Lifecycle Status
    ACTIVE (Last Updated: 21 hours ago)
  • Factory Lead Time
    12 Weeks
  • Power Dissipation
    2.7W
  • Terminal Position
    DUAL
  • Threshold Voltage
    1.3V
  • Additional Feature
    AVALANCHE RATED
  • Number of Channels
    1
  • Number of Elements
    1
  • Turn On Delay Time
    4.5 ns
  • Vgs(th) (Max) @ Id
    1.8V @ 250μA
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    9.9 ns
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~150°C TJ
  • Power Dissipation-Max
    2.7W Ta
  • Number of Terminations
    5
  • Rds On (Max) @ Id, Vgs
    10.3m Ω @ 10A, 8V
  • Transistor Application
    SWITCHING
  • Feedback Cap-Max (Crss)
    35 pF
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    47A
  • Gate Charge (Qg) (Max) @ Vgs
    5.1nC @ 4.5V
  • Gate to Source Voltage (Vgs)
    10V
  • Avalanche Energy Rating (Eas)
    65 mJ
  • Continuous Drain Current (ID)
    14A
  • Max Junction Temperature (Tj)
    150°C
  • Peak Reflow Temperature (Cel)
    260
  • Drain to Source Breakdown Voltage
    30V
  • Input Capacitance (Ciss) (Max) @ Vds
    700pF @ 15V
  • Drive Voltage (Max Rds On,Min Rds On)
    3V 8V
  • Current - Continuous Drain (Id) @ 25°C
    14A Ta 44A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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