CSD17308Q3
- Manufacturer’s Part#:CSD17308Q3
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:NexFET™
- ECAD Model:
- Description:MOSFET N-CH 30V 47A 8SON
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 11000
- Available: 295859
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.73944 | US $0.74 |
10+ | US $0.49296 | US $4.93 |
30+ | US $0.36972 | US $11.09 |
100+ | US $0.29578 | US $29.58 |
500+ | US $0.27113 | US $135.57 |
1000+ | US $0.24648 | US $246.48 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerTexas
- Manufacturer's Part #CSD17308Q3
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesNexFET™
- ECCNEAR99
- MountSurface Mount
- Width3.3mm
- Height1.1mm
- Length3.3mm
- FET TypeN-Channel
- Lead FreeContains Lead
- PackagingTape & Reel (TR)
- Pin Count8
- Rise Time5.7ns
- Thickness1mm
- Vgs (Max)+10V, -8V
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs1.3 V
- Part StatusActive
- Pbfree Codeyes
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-PowerTDFN
- Case ConnectionDRAIN
- Contact PlatingTin
- Fall Time (Typ)2.3 ns
- Base Part NumberCSD17308
- Lifecycle StatusACTIVE (Last Updated: 21 hours ago)
- Factory Lead Time12 Weeks
- Power Dissipation2.7W
- Terminal PositionDUAL
- Threshold Voltage1.3V
- Additional FeatureAVALANCHE RATED
- Number of Channels1
- Number of Elements1
- Turn On Delay Time4.5 ns
- Vgs(th) (Max) @ Id1.8V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time9.9 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max2.7W Ta
- Number of Terminations5
- Rds On (Max) @ Id, Vgs10.3m Ω @ 10A, 8V
- Transistor ApplicationSWITCHING
- Feedback Cap-Max (Crss)35 pF
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)47A
- Gate Charge (Qg) (Max) @ Vgs5.1nC @ 4.5V
- Gate to Source Voltage (Vgs)10V
- Avalanche Energy Rating (Eas)65 mJ
- Continuous Drain Current (ID)14A
- Max Junction Temperature (Tj)150°C
- Peak Reflow Temperature (Cel)260
- Drain to Source Breakdown Voltage30V
- Input Capacitance (Ciss) (Max) @ Vds700pF @ 15V
- Drive Voltage (Max Rds On,Min Rds On)3V 8V
- Current - Continuous Drain (Id) @ 25°C14A Ta 44A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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