CSD17577Q3AT
- Manufacturer’s Part#:CSD17577Q3AT
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:NexFET™
- ECAD Model:
- Description:MOSFET N-CH 30V 35A 8VSON
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 5000
- Available: 184678
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.39562 | US $0.40 |
10+ | US $0.26374 | US $2.64 |
30+ | US $0.19781 | US $5.93 |
100+ | US $0.15825 | US $15.83 |
500+ | US $0.14506 | US $72.53 |
1000+ | US $0.13187 | US $131.87 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerTexas
- Manufacturer's Part #CSD17577Q3AT
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesNexFET™
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Package / Case8-PowerVDFN
- Part StatusActive
- Operating Temperature-55°C~150°C TJ
- Factory Lead Time12 Weeks
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- MountSurface Mount
- Number of Pins8
- PackagingTape & Reel (TR)
- Base Part NumberCSD17577
- Number of Terminations5
- Terminal PositionDUAL
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Number of Elements1
- Lead FreeLead Free
- Pbfree Codeyes
- Additional FeatureAVALANCHE RATED
- Case ConnectionDRAIN
- Contact PlatingTin
- Length3.3mm
- Width3.3mm
- Mounting TypeSurface Mount
- Transistor Element MaterialSILICON
- Element ConfigurationSingle
- Transistor ApplicationSWITCHING
- Power Dissipation2.8W
- Number of Channels1
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max2.8W Ta 53W Tc
- Thickness800μm
- Turn On Delay Time4 ns
- Turn-Off Delay Time20 ns
- Operating ModeENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM)239A
- DS Breakdown Voltage-Min30V
- Avalanche Energy Rating (Eas)39 mJ
- Drain to Source Voltage (Vdss)30V
- Continuous Drain Current (ID)19A
- Gate to Source Voltage (Vgs)20V
- Threshold Voltage1.4V
- FET TypeN-Channel
- Vgs(th) (Max) @ Id1.8V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2310pF @ 15V
- Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
- Vgs (Max)±20V
- Rise Time31ns
- Fall Time (Typ)4 ns
- Current - Continuous Drain (Id) @ 25°C35A Ta
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Rds On (Max) @ Id, Vgs4.8m Ω @ 16A, 10V
Environmental & Export Classifications
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- REACH SVHCNo SVHC
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