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CSD18536KTTT

  • In Stock: 22315
  • Available: 50

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $7.58240US $7.58
10+US $6.82416US $68.24
30+US $5.30768US $159.23
100+US $4.35988US $435.99
500+US $4.17032US $2085.16
1000+US $3.79120US $3791.20

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Texas
  • Manufacturer's Part #
    CSD18536KTTT
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    NexFET™
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    8.41mm
  • Height
    4.83mm
  • Length
    10.18mm
  • FET Type
    N-Channel
  • Lead Free
    Contains Lead
  • Packaging
    Tape & Reel (TR)
  • Thickness
    4.44mm
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Active
  • Pbfree Code
    yes
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • Number of Pins
    3
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
  • Case Connection
    DRAIN
  • Terminal Finish
    Matte Tin (Sn)
  • Base Part Number
    CSD18536
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    6 Weeks
  • Threshold Voltage
    1.8V
  • Additional Feature
    AVALANCHE RATED
  • Number of Elements
    1
  • Vgs(th) (Max) @ Id
    2.2V @ 250μA
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~175°C TJ
  • Power Dissipation-Max
    375W Tc
  • Reach Compliance Code
    not_compliant
  • Number of Terminations
    3
  • Rds On (Max) @ Id, Vgs
    1.6m Ω @ 100A, 10V
  • Transistor Application
    SWITCHING
  • Feedback Cap-Max (Crss)
    51 pF
  • DS Breakdown Voltage-Min
    60V
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    200A
  • Gate Charge (Qg) (Max) @ Vgs
    140nC @ 10V
  • Avalanche Energy Rating (Eas)
    819 mJ
  • Continuous Drain Current (ID)
    349A
  • Peak Reflow Temperature (Cel)
    260
  • Drain to Source Voltage (Vdss)
    60V
  • Drain-source On Resistance-Max
    0.0022Ohm
  • Pulsed Drain Current-Max (IDM)
    400A
  • Input Capacitance (Ciss) (Max) @ Vds
    11430pF @ 30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Current - Continuous Drain (Id) @ 25°C
    200A Ta 349A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    2 (1 Year)

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