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CSD19533Q5AT

  • In Stock: 20000
  • Available: 91812

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $3.17800US $3.18
10+US $2.86020US $28.60
30+US $2.22460US $66.74
100+US $1.82735US $182.74
500+US $1.74790US $873.95
1000+US $1.58900US $1589.00

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Texas
  • Manufacturer's Part #
    CSD19533Q5AT
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    NexFET™
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Package / Case
    8-PowerTDFN
  • Part Status
    Active
  • Operating Temperature
    -55°C~150°C TJ
  • Factory Lead Time
    6 Weeks
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Mount
    Surface Mount
  • Number of Pins
    8
  • Packaging
    Tape & Reel (TR)
  • Base Part Number
    CSD19533
  • Number of Terminations
    5
  • Terminal Position
    DUAL
  • Terminal Form
    NO LEAD
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    not_compliant
  • Number of Elements
    1
  • Lead Free
    Contains Lead
  • Pbfree Code
    yes
  • Additional Feature
    AVALANCHE RATED
  • Case Connection
    DRAIN
  • Contact Plating
    Tin
  • Length
    4.9mm
  • Width
    6mm
  • Mounting Type
    Surface Mount
  • Transistor Element Material
    SILICON
  • Element Configuration
    Single
  • Transistor Application
    SWITCHING
  • Technology
    MOSFET (Metal Oxide)
  • Power Dissipation-Max
    3.2W Ta 96W Tc
  • Thickness
    1mm
  • Turn On Delay Time
    6 ns
  • Turn-Off Delay Time
    16 ns
  • Operating Mode
    ENHANCEMENT MODE
  • Drain Current-Max (Abs) (ID)
    13A
  • Drain-source On Resistance-Max
    0.0111Ohm
  • Pulsed Drain Current-Max (IDM)
    231A
  • DS Breakdown Voltage-Min
    100V
  • Avalanche Energy Rating (Eas)
    106 mJ
  • Drain to Source Voltage (Vdss)
    100V
  • Continuous Drain Current (ID)
    100A
  • Gate to Source Voltage (Vgs)
    20V
  • FET Type
    N-Channel
  • Vgs(th) (Max) @ Id
    3.4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2670pF @ 50V
  • Gate Charge (Qg) (Max) @ Vgs
    35nC @ 10V
  • Vgs (Max)
    ±20V
  • Rise Time
    6ns
  • Fall Time (Typ)
    5 ns
  • Feedback Cap-Max (Crss)
    12.5 pF
  • Current - Continuous Drain (Id) @ 25°C
    100A Ta
  • Drive Voltage (Max Rds On,Min Rds On)
    6V 10V
  • Rds On (Max) @ Id, Vgs
    9.4m Ω @ 13A, 10V

Environmental & Export Classifications

  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3

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    We ship orders once daily, around 5 p.m., except on Sundays. The estimated delivery time may vary depending on the courier service you choose, but typically ranges from 5 to 7 business days.

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