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DF11MR12W1M1B11BOMA1

  • In Stock: 695
  • Available: 24

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $201.54000US $201.54
10+US $174.66800US $1746.68
30+US $158.54480US $4756.34
100+US $145.10880US $14510.88
500+US $141.07800US $70539.00
1000+US $134.36000US $134360.00

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part #
    DF11MR12W1M1B11BOMA1
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    CoolSiC™+
  • ECCN
    EAR99
  • FET Type
    2 N-Channel (Dual)
  • Packaging
    Tray
  • Published
    2008
  • FET Feature
    Silicon Carbide (SiC)
  • Part Status
    Obsolete
  • Power - Max
    20mW
  • REACH Status
    REACH Unaffected
  • Configuration
    COMPLEX
  • Mounting Type
    Chassis Mount
  • Surface Mount
    NO
  • Terminal Form
    UNSPECIFIED
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    Module
  • Case Connection
    ISOLATED
  • Terminal Position
    UPPER
  • Number of Elements
    2
  • Vgs(th) (Max) @ Id
    5.5V @ 20mA
  • Operating Temperature
    -40°C~150°C TJ
  • Number of Terminations
    21
  • Rds On (Max) @ Id, Vgs
    23m Ω @ 50A, 15V
  • DS Breakdown Voltage-Min
    1200V
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Drain Current-Max (Abs) (ID)
    55A
  • Gate Charge (Qg) (Max) @ Vgs
    125nC @ 5V
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Drain to Source Voltage (Vdss)
    1200V 1.2kV
  • Pulsed Drain Current-Max (IDM)
    100A
  • Input Capacitance (Ciss) (Max) @ Vds
    3950pF @ 800V
  • Current - Continuous Drain (Id) @ 25°C
    50A

Environmental & Export Classifications

  • HTSUS
    8541.21.0095
  • ECCN Code
    EAR99
  • RoHS Status
    RoHS Compliant
  • JESD-30 Code
    R-XUFM-X21
  • Moisture Sensitivity Level (MSL)
    Not Applicable

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