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DRV5053VAEDBZTQ1

  • In Stock: 2560000
  • Available: 147218

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $90.00000US $90.00
10+US $70.00000US $700.00
30+US $60.00000US $1800.00
100+US $55.00000US $5500.00
500+US $53.00000US $26500.00
1000+US $50.00000US $50000.00

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Description

The DRV5053VAEDBZTQ1 is a high-precision, low-power Hall effect sensor from Texas Instruments, designed for various applications that require magnetic field detection. This device is part of the DRV5053 family, which is known for its ability to provide accurate and reliable magnetic sensing in a compact form factor.

Key Features:

  1. Operating Principle: The DRV5053VAEDBZTQ1 utilizes the Hall effect to detect the presence and strength of magnetic fields. It generates an output voltage that is proportional to the magnetic field strength, allowing for precise measurements.

  2. Output Type: The sensor features a linear output, which means that the output voltage varies linearly with the magnetic field strength. This is particularly useful for applications requiring analog signal processing.

  3. Supply Voltage: The device operates over a wide supply voltage range, typically from 2.5V to 38V, making it versatile for different power supply configurations.

  4. Low Power Consumption: The DRV5053VAEDBZTQ1 is designed for low power operation, which is essential for battery-powered applications. It has a low quiescent current, ensuring minimal energy consumption during operation.

  5. Temperature Range: The sensor is rated for operation over an extended temperature range, typically from -40°C to +125°C, making it suitable for harsh environmental conditions.

  6. Package Type: The device comes in a compact surface-mount package (DBZ), which facilitates easy integration into various circuit designs and helps save space on PCBs.

  7. Magnetic Sensitivity: The sensor is designed to detect both north and south poles of a magnet, providing flexibility in application design. The sensitivity can be adjusted based on the specific requirements of the application.

  8. Applications: The DRV5053VAEDBZTQ1 is ideal for a wide range of applications, including:

    • Position sensing
    • Speed detection
    • Current sensing
    • Proximity sensing
    • Automotive applications (e.g., wheel speed sensors, gear position sensors)
  9. Integration and Design: Texas Instruments provides comprehensive design resources, including datasheets, application notes, and reference designs, to assist engineers in integrating the DRV5053VAEDBZTQ1 into their systems effectively.

Conclusion:

The DRV5053VAEDBZTQ1 Hall effect sensor from Texas Instruments is a robust and versatile solution for magnetic field detection, offering high precision, low power consumption, and a wide operating range. Its compact design and linear output make it suitable for a variety of applications across different industries, particularly in automotive and industrial sectors.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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