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DS1245YP-100

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Description

The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1245 devices can be used in place of existing 128k x 8 static RAMs directly conforming to the popular bytewide 32-pin DIP standard. DS1245 devices in the PowerCap Module package are directly surface mountable and are normally paired with a DS9034PC PowerCap to form a complete Nonvolatile SRAM module.
There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.
FEATURES
• 10 years minimum data retention in the absence of external power
• Data is automatically protected during power loss
• Replaces 128k x 8 volatile static RAM, EEPROM or Flash memory
• Unlimited write cycles
• Low-power CMOS
• Read and write access times as fast as 70 ns
• Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
• Full ±10% VCC operating range (DS1245Y)
• Optional ±5% VCC operating range (DS1245AB)
• Optional industrial temperature range of -40°C to +85°C, designated IND
• JEDEC standard 32-pin DIP package
• New PowerCap Module (PCM) package - Directly surface-mountable module - Replaceable snap-on PowerCap provides lithium backup battery - Standardized pinout for all nonvolatile SRAM products - Detachment feature on PowerCap allows easy removal using a regular screwdriver
Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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