F800BJHEPBTLT9

8M-BIT ( 512Kbit ×16 / 1Mbit ×8 ) Boot Block Flash MEMORY
The product is a high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications.
The product can operate at VCC=2.7V-3.6V and VCCW=2.7V-3.6V or 11.7V-12.3V. Its low voltage operation capability realize battery life and suits for cellular phone application.Its Boot, Parameter and Main-blocked architecture, low voltage and extended cycling provide for highly flexible component suitable for portable terminals and personal computers. Its enhanced suspend capabilities provide for an ideal solution for code + data storage applications.
• Low Voltage Operation ― VCC=VCCW=2.7V-3.6V Single Voltage
• OTP(One Time Program) Block ― 3963 word + 4 word Program only array
• User-Configurable ×8 or ×16 Operation
• High-Performance Read Access Time ― 90ns(VCC=2.7V-3.6V)
• Operating Temperature ― -40°C to +85°C
• Low Power Management ― Typ. 2µA (VCC=3.0V) Standby Current ― Automatic Power Savings Mode Decreases ICCR in Static Mode ― Typ. 120µA (VCC=3.0V, TA=+25°C, f=32kHz) Read Current
• Optimized Array Blocking Architecture ― Two 4K-word (8K-byte) Boot Blocks ― Six 4K-word (8K-byte) Parameter Blocks ― Fifteen 32K-word (64K-byte) Main Blocks ― Bottom Boot Location
• Extended Cycling Capability ― Minimum 100,000 Block Erase Cycles
• Enhanced Automated Suspend Options ― Word/Byte Write Suspend to Read ― Block Erase Suspend to Word/Byte Write ― Block Erase Suspend to Read
• Enhanced Data Protection
Features ― Absolute Protection with VCCW≤VCCWLK ― Block Erase, Full Chip Erase, Word/Byte Write and Lock-Bit Configuration Lockout during Power Transitions ― Block Locking with Command and WP# ― Permanent Locking
• Automated Block Erase, Full Chip Erase, Word/Byte Write and Lock-Bit Configuration ― Command User Interface (CUI) ― Status Register (SR)
• SRAM-Compatible Write Interface
• Industry-Standard Packaging ― 48-Lead TSOP
• ETOXTM
* Nonvolatile Flash Technology
• CMOS Process (P-type silicon substrate)
• Not designed or rated as radiation hardened