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FCPF190N65FL1

  • In Stock: 23380
  • Available: 990

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $3.68368US $3.68
10+US $3.31531US $33.15
30+US $2.57858US $77.36
100+US $2.11812US $211.81
500+US $2.02602US $1013.01
1000+US $1.84184US $1841.84

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part #
    FCPF190N65FL1
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    SuperFET® II
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Weight
    2.27g
  • FET Type
    N-Channel
  • Packaging
    Tube
  • Rise Time
    11ns
  • Vgs (Max)
    ±20V
  • Resistance
    190mOhm
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    FET General Purpose Power
  • REACH Status
    REACH Unaffected
  • JEDEC-95 Code
    TO-220AB
  • Mounting Type
    Through Hole
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-220-3 Full Pack
  • Case Connection
    ISOLATED
  • Fall Time (Typ)
    4.2 ns
  • Terminal Finish
    Tin (Sn)
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    12 Weeks
  • Number of Channels
    1
  • Number of Elements
    1
  • Turn On Delay Time
    25 ns
  • Vgs(th) (Max) @ Id
    5V @ 250μA
  • Turn-Off Delay Time
    62 ns
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~150°C TJ
  • Power Dissipation-Max
    39W Tc
  • Reach Compliance Code
    not_compliant
  • Number of Terminations
    3
  • Rds On (Max) @ Id, Vgs
    190m Ω @ 10A, 10V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    78nC @ 10V
  • Gate to Source Voltage (Vgs)
    30V
  • Avalanche Energy Rating (Eas)
    400 mJ
  • Continuous Drain Current (ID)
    20.6A
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Drain to Source Breakdown Voltage
    650V
  • Input Capacitance (Ciss) (Max) @ Vds
    3055pF @ 100V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Current - Continuous Drain (Id) @ 25°C
    20.6A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PSFM-T3
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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