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FDC6305N

  • In Stock: 394
  • Available: 529955

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.72924US $0.73
10+US $0.48616US $4.86
30+US $0.36462US $10.94
100+US $0.29170US $29.17
500+US $0.26739US $133.70
1000+US $0.24308US $243.08

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Description

The FDC6305N is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for high-speed switching applications and is commonly used in power management, motor control, and other electronic circuits where efficient switching is crucial.

Key Features:

  1. Dual Configuration: The FDC6305N contains two N-channel MOSFETs in a single package, allowing for compact designs and efficient use of board space.

  2. Package Type: It is typically housed in a surface-mount package, such as the SO-8 (Small Outline 8-lead) or similar, which facilitates easy integration into modern PCB designs.

  3. Voltage and Current Ratings: The FDC6305N is rated for a maximum drain-source voltage (V_DS) of around 30V, making it suitable for low to medium voltage applications. It can handle continuous drain currents (I_D) of up to 5A, depending on the thermal conditions and PCB layout.

  4. R_DS(on): One of the critical specifications of the FDC6305N is its low on-resistance (R_DS(on)), which is typically in the range of a few milliohms. This low resistance minimizes power loss during operation, enhancing overall efficiency.

  5. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is relatively low, allowing the MOSFET to be driven by standard logic levels. This feature is particularly beneficial in battery-operated devices where low gate drive voltages can help conserve power.

  6. Fast Switching Speed: The FDC6305N is designed for fast switching applications, with low gate charge (Q_g) values that enable quick turn-on and turn-off times. This characteristic is essential for applications like PWM (Pulse Width Modulation) control.

  7. Thermal Performance: The device is designed to handle thermal dissipation effectively, with a maximum junction temperature (T_J) rating that allows it to operate reliably in various environmental conditions.

  8. Applications: Common applications for the FDC6305N include DC-DC converters, load switches, power management circuits, and motor drivers. Its versatility makes it suitable for consumer electronics, automotive, and industrial applications.

Electrical Characteristics:

  • V_DS (Max): 30V
  • I_D (Max): 5A
  • R_DS(on): Typically around 10-20 mΩ
  • V_GS(th): Typically 1-2V
  • Q_g: Low gate charge for fast switching

Conclusion:

The FDC6305N from ON Semiconductor is a robust and efficient dual N-channel MOSFET that offers excellent performance for a variety of electronic applications. Its combination of low on-resistance, fast switching capabilities, and dual configuration makes it a popular choice among engineers looking to optimize their designs for efficiency and space.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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