FDC6305N
- Manufacturer's Part No.:FDC6305N
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- Series:PowerTrench®
- Description:MOSFET 2N-CH 20V 2.7A SSOT6
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- In Stock: 394
- Available: 529955
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.72924 | US $0.73 |
10+ | US $0.48616 | US $4.86 |
30+ | US $0.36462 | US $10.94 |
100+ | US $0.29170 | US $29.17 |
500+ | US $0.26739 | US $133.70 |
1000+ | US $0.24308 | US $243.08 |
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- Description
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The FDC6305N is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for high-speed switching applications and is commonly used in power management, motor control, and other electronic circuits where efficient switching is crucial.
Key Features:
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Dual Configuration: The FDC6305N contains two N-channel MOSFETs in a single package, allowing for compact designs and efficient use of board space.
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Package Type: It is typically housed in a surface-mount package, such as the SO-8 (Small Outline 8-lead) or similar, which facilitates easy integration into modern PCB designs.
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Voltage and Current Ratings: The FDC6305N is rated for a maximum drain-source voltage (V_DS) of around 30V, making it suitable for low to medium voltage applications. It can handle continuous drain currents (I_D) of up to 5A, depending on the thermal conditions and PCB layout.
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R_DS(on): One of the critical specifications of the FDC6305N is its low on-resistance (R_DS(on)), which is typically in the range of a few milliohms. This low resistance minimizes power loss during operation, enhancing overall efficiency.
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Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is relatively low, allowing the MOSFET to be driven by standard logic levels. This feature is particularly beneficial in battery-operated devices where low gate drive voltages can help conserve power.
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Fast Switching Speed: The FDC6305N is designed for fast switching applications, with low gate charge (Q_g) values that enable quick turn-on and turn-off times. This characteristic is essential for applications like PWM (Pulse Width Modulation) control.
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Thermal Performance: The device is designed to handle thermal dissipation effectively, with a maximum junction temperature (T_J) rating that allows it to operate reliably in various environmental conditions.
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Applications: Common applications for the FDC6305N include DC-DC converters, load switches, power management circuits, and motor drivers. Its versatility makes it suitable for consumer electronics, automotive, and industrial applications.
Electrical Characteristics:
- V_DS (Max): 30V
- I_D (Max): 5A
- R_DS(on): Typically around 10-20 mΩ
- V_GS(th): Typically 1-2V
- Q_g: Low gate charge for fast switching
Conclusion:
The FDC6305N from ON Semiconductor is a robust and efficient dual N-channel MOSFET that offers excellent performance for a variety of electronic applications. Its combination of low on-resistance, fast switching capabilities, and dual configuration makes it a popular choice among engineers looking to optimize their designs for efficiency and space.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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