FDD5N50UTM-WS
- Manufacturer’s Part#:FDD5N50UTM-WS
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:FRFET®
- ECAD Model:
- Description:MOSFET N-CH 500V 3A DPAK
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 138018
- Available: 2500
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.03280 | US $2.03 |
10+ | US $1.35520 | US $13.55 |
30+ | US $1.01640 | US $30.49 |
100+ | US $0.81312 | US $81.31 |
500+ | US $0.74536 | US $372.68 |
1000+ | US $0.67760 | US $677.60 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part #FDD5N50UTM-WS
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesFRFET®
- ECCNEAR99
- MountSurface Mount
- Weight260.37mg
- FET TypeN-Channel
- PackagingTape & Reel (TR)
- Rise Time21ns
- Vgs (Max)±30V
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- Pbfree Codeyes
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- JEDEC-95 CodeTO-252AA
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
- Case ConnectionDRAIN
- Fall Time (Typ)20 ns
- Terminal FinishTin (Sn)
- Lifecycle StatusACTIVE (Last Updated: 12 hours ago)
- Factory Lead Time8 Weeks
- Power Dissipation40W
- Number of Elements1
- Turn On Delay Time14 ns
- Vgs(th) (Max) @ Id5V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time27 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max40W Tc
- Number of Terminations2
- Rds On (Max) @ Id, Vgs2 Ω @ 1.5A, 10V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)3A
- Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
- Gate to Source Voltage (Vgs)30V
- Avalanche Energy Rating (Eas)275 mJ
- Continuous Drain Current (ID)3A
- Drain-source On Resistance-Max2Ohm
- Drain to Source Breakdown Voltage500V
- Input Capacitance (Ciss) (Max) @ Vds650pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C3A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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