FDD6612A
- Manufacturer’s Part#:FDD6612A
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:PowerTrench®
- ECAD Model:
- Description:MOSFET N-CH 30V 9.5A DPAK
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Delivery:
- In Stock: 241355
- Available: 239465
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.17162 | US $1.17 |
10+ | US $0.78108 | US $7.81 |
30+ | US $0.58581 | US $17.57 |
100+ | US $0.46865 | US $46.87 |
500+ | US $0.42959 | US $214.80 |
1000+ | US $0.39054 | US $390.54 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part #FDD6612A
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesPowerTrench®
- ECCNEAR99
- MountSurface Mount
- Width6.22mm
- Height2.39mm
- Length6.73mm
- Weight260.37mg
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2004
- Rise Time5ns
- Vgs (Max)±20V
- Resistance20MOhm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs2 V
- Part StatusActive
- Pbfree Codeyes
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating30A
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
- Case ConnectionDRAIN
- Fall Time (Typ)4 ns
- Terminal FinishTin (Sn)
- Lifecycle StatusACTIVE (Last Updated: 14 hours ago)
- Factory Lead Time10 Weeks
- Power Dissipation36W
- Threshold Voltage2V
- Additional FeatureLOGIC LEVEL COMPATIBLE
- Number of Elements1
- Turn On Delay Time9 ns
- Vgs(th) (Max) @ Id3V @ 250μA
- Voltage - Rated DC30V
- Radiation HardeningNo
- Turn-Off Delay Time24 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max2.8W Ta 36W Tc
- Number of Terminations2
- Rds On (Max) @ Id, Vgs20m Ω @ 9.5A, 10V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)9.5A
- Gate Charge (Qg) (Max) @ Vgs9.4nC @ 5V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)90 mJ
- Continuous Drain Current (ID)30A
- Pulsed Drain Current-Max (IDM)60A
- Drain to Source Breakdown Voltage30V
- Input Capacitance (Ciss) (Max) @ Vds660pF @ 15V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C9.5A Ta 30A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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