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FDN304P

  • In Stock: 204000
  • Available: 750000

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.26928US $0.27
10+US $0.17952US $1.80
30+US $0.13464US $4.04
100+US $0.10771US $10.77
500+US $0.09874US $49.37
1000+US $0.08976US $89.76

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  • Description
  • Alternatives
  • Shopping Guide
Description

The FDN304P is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for use in various electronic applications, particularly in switching and amplification circuits. Here’s a detailed description of its features and specifications:

Key Features:

  1. Type: P-channel MOSFET
  2. Package: Typically available in a TO-92 package, which is a cylindrical plastic package that is easy to handle and mount on PCBs.
  3. Voltage Rating: The FDN304P has a maximum drain-source voltage (V_DS) rating of around -60V, making it suitable for high-voltage applications.
  4. Current Rating: It can handle a continuous drain current (I_D) of approximately -0.5A, which allows it to drive moderate loads.
  5. Gate Threshold Voltage (V_GS(th)): The gate-source threshold voltage is typically in the range of -0.8V to -2.0V, indicating the voltage required to turn the MOSFET on.
  6. R_DS(on): The on-resistance (R_DS(on)) is low, typically around 0.5 ohms at a gate-source voltage of -10V, which helps in reducing power losses during operation.
  7. Switching Speed: The FDN304P features fast switching capabilities, making it suitable for applications requiring quick on/off control.
  8. Temperature Range: It operates effectively over a wide temperature range, typically from -55°C to +150°C, allowing it to be used in various environmental conditions.

Applications:

  • Power Management: Used in power supply circuits for efficient switching.
  • Load Switching: Ideal for controlling loads in battery-powered devices.
  • Signal Switching: Can be used in analog signal switching applications.
  • Level Shifting: Useful in interfacing different voltage levels in mixed-signal systems.

Electrical Characteristics:

  • Input Capacitance (C_iss): The input capacitance is relatively low, which contributes to its fast switching performance.
  • Output Capacitance (C_oss): The output capacitance is also low, which helps in minimizing the delay during switching.
  • Reverse Transfer Capacitance (C_rss): This parameter is important for understanding the device's behavior in high-frequency applications.

Conclusion:

The FDN304P from ON Semiconductor is a versatile P-channel MOSFET that combines high voltage and current ratings with low on-resistance and fast switching capabilities. Its robust design and wide operating temperature range make it suitable for a variety of applications in consumer electronics, automotive systems, and industrial equipment.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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