FDP083N15A-F102

The FDP083N15A-F102 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. This component is designed for high-efficiency switching applications, making it suitable for various power management tasks in electronic circuits.

Key Features:

1. Type: N-channel MOSFET

   • The N-channel configuration allows for efficient conduction and is commonly used in high-side switching applications.

2. Voltage Rating:

   • The device has a maximum drain-source voltage (V_DS) of 150V, which makes it suitable for applications that require high voltage handling.

3. Current Rating:

   • It can handle a continuous drain current (I_D) of up to 83A at a specified temperature, making it capable of managing significant power loads.

4. R_DS(on):

   • The on-resistance (R_DS(on)) is typically low, around 0.08 ohms at a gate-source voltage (V_GS) of 10V. This low on-resistance contributes to reduced power losses during operation, enhancing overall efficiency.

5. Gate Threshold Voltage (V_GS(th)):

   • The gate threshold voltage is typically in the range of 2V to 4V, which indicates the voltage required to turn the MOSFET on. This feature allows for compatibility with various control voltages.

6. Package Type:

   • The FDP083N15A-F102 is available in a TO-220 package, which provides good thermal performance and ease of mounting on heat sinks for effective heat dissipation.

7. Thermal Characteristics:

   • The device has a thermal resistance from junction to case (RθJC) that allows for efficient heat management, crucial for maintaining performance and reliability in high-power applications.

8. Applications:

   • This MOSFET is ideal for use in power supplies, motor drives, and other applications where efficient switching and high current handling are required. It is also suitable for use in DC-DC converters and inverters.

Electrical Characteristics:

• Maximum Gate-Source Voltage (V_GS): ±20V
• Maximum Power Dissipation (P_D): Typically around 94W, depending on the thermal management.
• Body Diode Characteristics: The device features an intrinsic body diode, which can conduct in the reverse direction, providing additional functionality in certain applications.

Summary:

The FDP083N15A-F102 from ON Semiconductor is a robust and efficient N-channel MOSFET designed for high-voltage and high-current applications. Its low on-resistance, high current capacity, and effective thermal management make it a preferred choice for engineers looking to optimize power efficiency in their designs. The TO-220 package facilitates easy integration into various electronic systems, ensuring reliable performance in demanding environments.