FDS4435BZ-F085
- Manufacturer’s Part#:FDS4435BZ-F085
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:Automotive, AEC-Q101, PowerTrench®
- ECAD Model:
- Description:MOSFET P-CH 30V 8-SOIC
- Datasheet:
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- In Stock: 12819
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- Available: 12819
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Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part #FDS4435BZ-F085
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesAutomotive, AEC-Q101, PowerTrench®
- ECCNEAR99
- MountSurface Mount
- Weight230.4mg
- FET TypeP-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2009
- Rise Time6ns
- Vgs (Max)±25V
- Resistance20MOhm
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- Pbfree Codeyes
- SubcategoryOther Transistors
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Fall Time (Typ)12 ns
- Terminal FinishNickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
- Lifecycle StatusACTIVE (Last Updated: 12 hours ago)
- Power Dissipation2.5W
- Terminal PositionDUAL
- Number of Elements1
- Turn On Delay Time10 ns
- Vgs(th) (Max) @ Id3V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time30 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max2.5W Ta
- Number of Terminations8
- Rds On (Max) @ Id, Vgs20m Ω @ 8.8A, 10V
- Transistor ApplicationSWITCHING
- Feedback Cap-Max (Crss)345 pF
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs40nC @ 10V
- Gate to Source Voltage (Vgs)25V
- Continuous Drain Current (ID)8.8A
- Drain to Source Voltage (Vdss)30V
- Drain to Source Breakdown Voltage-30V
- Input Capacitance (Ciss) (Max) @ Vds1845pF @ 15V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C8.8A Ta
Environmental & Export Classifications
- HTSUS8541.29.0095
- RoHS StatusROHS3 Compliant
- JESD-609 Codee4
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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