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FDS6990AS

  • In Stock: 129700
  • Available: 230989

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $15.42800US $15.43
10+US $13.88520US $138.85
30+US $10.79960US $323.99
100+US $8.87110US $887.11
500+US $8.48540US $4242.70
1000+US $7.71400US $7714.00

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part #
    FDS6990AS
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    PowerTrench®, SyncFET™
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    4mm
  • Height
    1.75mm
  • Length
    5mm
  • Weight
    187mg
  • FET Type
    2 N-Channel (Dual)
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Published
    2005
  • Rise Time
    8ns
  • Resistance
    22mOhm
  • FET Feature
    Logic Level Gate
  • Nominal Vgs
    1.7 V
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    FET General Purpose Power
  • Termination
    SMD/SMT
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Fall Time (Typ)
    8 ns
  • Terminal Finish
    Tin (Sn)
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    10 Weeks
  • Power Dissipation
    2W
  • Threshold Voltage
    1.7V
  • Number of Channels
    2
  • Number of Elements
    2
  • Turn On Delay Time
    8 ns
  • Vgs(th) (Max) @ Id
    3V @ 1mA
  • Dual Supply Voltage
    30V
  • Turn-Off Delay Time
    24 ns
  • Qualification Status
    Not Qualified
  • Element Configuration
    Dual
  • Max Power Dissipation
    900mW
  • Operating Temperature
    -55°C~150°C TJ
  • Number of Terminations
    8
  • Rds On (Max) @ Id, Vgs
    22m Ω @ 7.5A, 10V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    30
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    7.5A
  • Gate Charge (Qg) (Max) @ Vgs
    14nC @ 5V
  • Gate to Source Voltage (Vgs)
    20V
  • Continuous Drain Current (ID)
    7.5mA
  • Max Junction Temperature (Tj)
    150°C
  • Peak Reflow Temperature (Cel)
    260
  • Drain to Source Breakdown Voltage
    30V
  • Input Capacitance (Ciss) (Max) @ Vds
    550pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    7.5A

Environmental & Export Classifications

  • HTSUS
    8541.21.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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