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FGH40N60UFDTU

  • In Stock: 29225
  • Available: 378

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $3.38100US $3.38
10+US $3.04290US $30.43
30+US $2.36670US $71.00
100+US $1.94407US $194.41
500+US $1.85955US $929.78
1000+US $1.69050US $1690.50

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part #
    FGH40N60UFDTU
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Width
    4.7mm
  • Height
    20.6mm
  • Length
    15.6mm
  • Weight
    6.39g
  • HTS Code
    8541.29.00.95
  • IGBT Type
    Field Stop
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Published
    2009
  • Input Type
    Standard
  • Gate Charge
    120nC
  • Part Status
    Active
  • Pbfree Code
    yes
  • Power - Max
    290W
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Turn On Time
    110 ns
  • JEDEC-95 Code
    TO-247AB
  • Mounting Type
    Through Hole
  • Number of Pins
    3
  • Package / Case
    TO-247-3
  • Test Condition
    400V, 40A, 10 Ω, 15V
  • Case Connection
    COLLECTOR
  • Terminal Finish
    Tin (Sn)
  • Base Part Number
    FGH40N60
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Switching Energy
    1.19mJ (on), 460μJ (off)
  • Factory Lead Time
    8 Weeks
  • Additional Feature
    LOW CONDUCTION LOSS
  • Fall Time-Max (tf)
    100ns
  • Number of Elements
    1
  • Turn On Delay Time
    24 ns
  • Radiation Hardening
    No
  • Td (on/off) @ 25°C
    24ns/112ns
  • Turn-Off Delay Time
    112 ns
  • Element Configuration
    Single
  • Max Collector Current
    80A
  • Max Power Dissipation
    290W
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Reverse Recovery Time
    45 ns
  • Number of Terminations
    3
  • Transistor Application
    POWER CONTROL
  • Vce(on) (Max) @ Vge, Ic
    2.4V @ 15V, 40A
  • Gate-Emitter Voltage-Max
    20V
  • Turn Off Time-Nom (toff)
    190 ns
  • Transistor Element Material
    SILICON
  • Gate-Emitter Thr Voltage-Max
    6.5V
  • Collector Emitter Voltage (VCEO)
    600V
  • Current - Collector Pulsed (Icm)
    120A
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    600V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    Not Applicable

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