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FMN1T148

  • In Stock: 61000
  • Available: 735115

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.14850US $0.15
10+US $0.09900US $0.99
30+US $0.07425US $2.23
100+US $0.05940US $5.94
500+US $0.05445US $27.22
1000+US $0.04950US $49.50

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Description

The FMN1T148 is a component manufactured by Rohm Semiconductor, designed primarily for use in power management applications. It is a high-performance, low-voltage N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that is optimized for efficient switching and amplification in electronic circuits.

Key Features:

  1. Type: N-channel MOSFET
  2. Voltage Rating: The FMN1T148 typically has a maximum drain-source voltage (V_DS) rating of around 30V, making it suitable for low to medium voltage applications.
  3. Current Rating: It can handle continuous drain currents (I_D) of up to 1.5A, which allows it to be used in various power applications without overheating.
  4. R_DS(on): The on-resistance (R_DS(on)) is low, often in the range of a few milliohms, which minimizes power loss during operation and enhances efficiency.
  5. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is designed to be low, allowing the MOSFET to turn on with a relatively low gate voltage, which is beneficial for battery-operated devices.
  6. Package Type: The FMN1T148 is typically available in a compact surface-mount package, such as SOT-23 or similar, which facilitates easy integration into printed circuit boards (PCBs) and helps save space in electronic designs.

Applications:

  • Power Management: Ideal for DC-DC converters, voltage regulators, and power supply circuits.
  • Switching Applications: Used in load switching, motor control, and relay replacement applications.
  • Consumer Electronics: Commonly found in devices like smartphones, tablets, and other portable electronics where efficient power management is crucial.

Performance Characteristics:

  • Thermal Performance: The device is designed to operate efficiently at elevated temperatures, with a thermal resistance that allows for effective heat dissipation.
  • Fast Switching Speed: The FMN1T148 features fast switching capabilities, making it suitable for high-frequency applications.
  • Robustness: It is built to withstand various electrical stresses, ensuring reliability in demanding environments.

Conclusion:

The FMN1T148 from Rohm Semiconductor is a versatile and efficient N-channel MOSFET that caters to a wide range of applications in power management and switching. Its low on-resistance, compact package, and robust performance characteristics make it an excellent choice for designers looking to optimize their electronic circuits for efficiency and reliability.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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