FQB8N90CTM
- Manufacturer’s Part#:FQB8N90CTM
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:QFET®
- ECAD Model:
- Description:MOSFET N-CH 900V 6.3A D2PAK
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 59774
- Available: 4
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $3.03802 | US $3.04 |
10+ | US $2.73422 | US $27.34 |
30+ | US $2.12661 | US $63.80 |
100+ | US $1.74686 | US $174.69 |
500+ | US $1.67091 | US $835.45 |
1000+ | US $1.51901 | US $1519.01 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part #FQB8N90CTM
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesQFET®
- ECCNEAR99
- MountSurface Mount
- Width9.65mm
- Height4.83mm
- Length10.67mm
- Weight1.31247g
- FET TypeN-Channel
- PackagingTape & Reel (TR)
- Rise Time110ns
- Vgs (Max)±30V
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- Pbfree Codeyes
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Case ConnectionDRAIN
- Fall Time (Typ)70 ns
- Terminal FinishTin (Sn)
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time11 Weeks
- Number of Channels1
- Number of Elements1
- Turn On Delay Time40 ns
- Vgs(th) (Max) @ Id5V @ 250μA
- Turn-Off Delay Time70 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max171W Tc
- Reach Compliance Codenot_compliant
- Number of Terminations2
- Rds On (Max) @ Id, Vgs1.9 Ω @ 3.15A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs45nC @ 10V
- Gate to Source Voltage (Vgs)30V
- Avalanche Energy Rating (Eas)850 mJ
- Continuous Drain Current (ID)6.3A
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Pulsed Drain Current-Max (IDM)25A
- Drain to Source Breakdown Voltage900V
- Input Capacitance (Ciss) (Max) @ Vds2080pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C6.3A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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