FQPF17N40
- Manufacturer’s Part#:FQPF17N40
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:QFET®
- ECAD Model:
- Description:MOSFET N-CH 400V 9.5A TO-220F
- Datasheet:
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- In Stock: 14094
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- Available: 14094
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Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part #FQPF17N40
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesQFET®
- ECCNEAR99
- MountThrough Hole
- FET TypeN-Channel
- HTS Code8541.29.00.95
- Lead FreeLead Free
- PackagingTube
- Rise Time185ns
- Vgs (Max)±30V
- TechnologyMOSFET (Metal Oxide)
- Part StatusObsolete
- Pbfree Codeyes
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeThrough Hole
- Current Rating16A
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-220-3 Full Pack
- Fall Time (Typ)105 ns
- Terminal FinishTin (Sn)
- Power Dissipation56W
- Number of Elements1
- Vgs(th) (Max) @ Id5V @ 250μA
- Voltage - Rated DC400V
- Turn-Off Delay Time90 ns
- Qualification StatusNot Qualified
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max56W Tc
- Number of Terminations3
- Rds On (Max) @ Id, Vgs270m Ω @ 4.75A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs60nC @ 10V
- Gate to Source Voltage (Vgs)30V
- Avalanche Energy Rating (Eas)1000 mJ
- Continuous Drain Current (ID)9.5A
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain-source On Resistance-Max0.27Ohm
- Drain to Source Breakdown Voltage400V
- Input Capacitance (Ciss) (Max) @ Vds2300pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C9.5A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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