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FQPF2N60C

  • In Stock: 100000
  • Available: 59949

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.45000US $0.45
10+US $0.30000US $3.00
30+US $0.22500US $6.75
100+US $0.18000US $18.00
500+US $0.16500US $82.50
1000+US $0.15000US $150.00

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part #
    FQPF2N60C
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    QFET®
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Width
    4.7mm
  • Height
    9.19mm
  • Length
    10.16mm
  • Weight
    2.27g
  • FET Type
    N-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Published
    2003
  • Rise Time
    25ns
  • Vgs (Max)
    ±30V
  • Resistance
    4.7Ohm
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    FET General Purpose Power
  • REACH Status
    REACH Unaffected
  • JEDEC-95 Code
    TO-220AB
  • Mounting Type
    Through Hole
  • Current Rating
    2A
  • Number of Pins
    3
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-220-3 Full Pack
  • Case Connection
    ISOLATED
  • Fall Time (Typ)
    28 ns
  • Terminal Finish
    Tin (Sn)
  • Lifecycle Status
    ACTIVE (Last Updated: 9 hours ago)
  • Factory Lead Time
    4 Weeks
  • Power Dissipation
    23W
  • Threshold Voltage
    4V
  • Number of Elements
    1
  • Turn On Delay Time
    9 ns
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Voltage - Rated DC
    600V
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    24 ns
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~150°C TJ
  • Power Dissipation-Max
    23W Tc
  • Number of Terminations
    3
  • Rds On (Max) @ Id, Vgs
    4.7 Ω @ 1A, 10V
  • Transistor Application
    SWITCHING
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    2A
  • Gate Charge (Qg) (Max) @ Vgs
    12nC @ 10V
  • Gate to Source Voltage (Vgs)
    30V
  • Continuous Drain Current (ID)
    2A
  • Pulsed Drain Current-Max (IDM)
    8A
  • Drain to Source Breakdown Voltage
    600V
  • Input Capacitance (Ciss) (Max) @ Vds
    235pF @ 25V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Current - Continuous Drain (Id) @ 25°C
    2A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    Not Applicable

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