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G2R1000MT17J
- Manufacturer’s Part#:G2R1000MT17J
- Manufacturer:
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- Series:-
- ECAD Model:
- Description:SIC MOSFET N-CH 3A TO263-7
- Quantity:RFQAdd to RFQ List
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- In Stock: 2
- Available: 1000
Reference Price(In US Dollars)
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1+ | US $6.82000 | US $6.82 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Quick RFQ
Product Parameter
- ManufacturerGeneSiC Semiconductor
- Manufacturer's Part #G2R1000MT17J
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- Series
- Product StatusActive
- FET TypeN-Channel
- TechnologySiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)1700 V
- Current - Continuous Drain (Id) @ 25°C3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)20V
- Rds On (Max) @ Id, Vgs1.2Ohm @ 2A, 20V
- Vgs(th) (Max) @ Id4V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs-
- Vgs (Max)+20V, -10V
- Input Capacitance (Ciss) (Max) @ Vds139 pF @ 1000 V
- FET Feature-
- Power Dissipation (Max)54W (Tc)
- Operating Temperature-55°C ~ 175°C (TJ)
- Mounting TypeSurface Mount
- Supplier Device PackageTO-263-7
- Package / CaseTO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Environmental & Export Classifications
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