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G3R160MT17D
- Manufacturer’s Part#:G3R160MT17D
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- Series:-
- ECAD Model:
- Description:SIC MOSFET N-CH 21A TO247-3
- Quantity:RFQAdd to RFQ List
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- Available: 2700
Reference Price(In US Dollars)
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1+ | US $12.97000 | US $12.97 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
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Product Parameter
- ManufacturerGeneSiC Semiconductor
- Manufacturer's Part #G3R160MT17D
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- Series
- Product StatusActive
- FET TypeN-Channel
- TechnologySiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)1700 V
- Current - Continuous Drain (Id) @ 25°C21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)15V
- Rds On (Max) @ Id, Vgs208mOhm @ 12A, 15V
- Vgs(th) (Max) @ Id2.7V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs51 nC @ 15 V
- Vgs (Max)±15V
- Input Capacitance (Ciss) (Max) @ Vds1272 pF @ 1000 V
- FET Feature-
- Power Dissipation (Max)175W (Tc)
- Operating Temperature-55°C ~ 175°C (TJ)
- Mounting TypeThrough Hole
- Supplier Device PackageTO-247-3
- Package / CaseTO-247-3
Environmental & Export Classifications
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