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HGT1S10N120BNS

  • In Stock: 68800
  • Available: 28534

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $4.30000US $4.30
10+US $3.87000US $38.70
30+US $3.01000US $90.30
100+US $2.47250US $247.25
500+US $2.36500US $1182.50
1000+US $2.15000US $2150.00

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    HGT1S10N120BNS
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Surface Mount, Through Hole
  • Width
    9.65mm
  • Height
    4.83mm
  • Length
    10.67mm
  • Weight
    1.31247g
  • Current
    35A
  • Voltage
    1.2kV
  • HTS Code
    8541.29.00.95
  • IGBT Type
    NPT
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Input Type
    Standard
  • Gate Charge
    100nC
  • Part Status
    Not For New Designs
  • Pbfree Code
    yes
  • REACH Status
    REACH Unaffected
  • Turn On Time
    32 ns
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • Current Rating
    35A
  • Number of Pins
    3
  • Package / Case
    TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Test Condition
    960V, 10A, 10 Ω, 15V
  • Case Connection
    COLLECTOR
  • Terminal Finish
    Tin (Sn)
  • Base Part Number
    HGT1S10N120
  • Lifecycle Status
    ACTIVE, NOT REC (Last Updated: 1 day ago)
  • Switching Energy
    320μJ (on), 800μJ (off)
  • Factory Lead Time
    44 Weeks
  • Power Dissipation
    298W
  • Additional Feature
    LOW CONDUCTION LOSS
  • Number of Elements
    1
  • Voltage - Rated DC
    1.2kV
  • Radiation Hardening
    No
  • Td (on/off) @ 25°C
    23ns/165ns
  • Element Configuration
    Single
  • Max Breakdown Voltage
    1.2kV
  • Max Collector Current
    35A
  • Max Power Dissipation
    312W
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Number of Terminations
    2
  • Transistor Application
    MOTOR CONTROL
  • Vce(on) (Max) @ Vge, Ic
    2.7V @ 15V, 10A
  • Turn Off Time-Nom (toff)
    330 ns
  • Reflow Temperature-Max (s)
    30
  • Transistor Element Material
    SILICON
  • Continuous Collector Current
    55A
  • Peak Reflow Temperature (Cel)
    260
  • Collector Emitter Voltage (VCEO)
    1.2kV
  • Current - Collector Pulsed (Icm)
    80A
  • Collector Emitter Breakdown Voltage
    1.2kV
  • Collector Emitter Saturation Voltage
    2.7V
  • Voltage - Collector Emitter Breakdown (Max)
    1200V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PSSO-G2
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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