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IMBF170R450M1

  • In Stock: 1935
  • Price: please call
  • Available: 2000
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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part #
    IMBF170R450M1
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    CoolSiC™
  • FET Type
    N-Channel
  • Technology
    SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss)
    1700 V
  • Current - Continuous Drain (Id) @ 25°C
    9.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    12V, 15V
  • Rds On (Max) @ Id, Vgs
    450mOhm @ 2A, 15V
  • Vgs(th) (Max) @ Id
    5.7V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs
    11 nC @ 12 V
  • Vgs (Max)
    +20V, -10V
  • Input Capacitance (Ciss) (Max) @ Vds
    610 pF @ 1000 V
  • Power Dissipation (Max)
    107W (Tc)
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Supplier Device Package
    PG-TO263-7-13
  • Package / Case
    TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Environmental & Export Classifications

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    We ship orders once daily, around 5 p.m., except on Sundays. The estimated delivery time may vary depending on the courier service you choose, but typically ranges from 5 to 7 business days.

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