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INA216A4YFFR

  • In Stock: 20000
  • Available: 216885

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $1.72500US $1.73
10+US $1.15000US $11.50
30+US $0.86250US $25.88
100+US $0.69000US $69.00
500+US $0.63250US $316.25
1000+US $0.57500US $575.00

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  • esd
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  • iso14001
  • iso9001
  • D&B
  • Description
  • Alternatives
  • Shopping Guide
Description

The INA2586 is a 8-Kbit (1024 x 8-bit) n-MOS floating gate electrically erasable programmable read only memory (EEPROM). IC works in systems with serial I2C-bus. Up to two INA2586 devices may be connected to the I2C-bus.
The programming of the array is implemented by electron’s tunneling.
The programming voltage is generated on-chip, using a voltage multiplier. Device is functionally identical to the SDA2586, Siemens. IC are made in 8-pin DIP and 8-pin SOP.
FEATURES
♦ Non-volatile storage of information during 10 years
♦ Single supply (Ucc=4,75 B - 5,25 B)
♦ On-chip voltage multiplier
♦ On-chip generator of bulk biasing
♦ Serial input/output I2C-bus
♦ 10 000 ERASE/WRITE cycles per byte;
♦ Internal reprogramming (no external components)
♦ Duration of the ERASE/WRITE cycle is 15 ms
♦ Temperature range: 0 ÷ +70°C
Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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