IPB020N10N5ATMA1
- Manufacturer’s Part#:IPB020N10N5ATMA1
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:OptiMOS™
- ECAD Model:
- Description:MOSFET N-CH 100V 120A TO263-3
- Datasheet:
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 10000
- Available: 27413
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $5.01120 | US $5.01 |
10+ | US $4.51008 | US $45.10 |
30+ | US $3.50784 | US $105.24 |
100+ | US $2.88144 | US $288.14 |
500+ | US $2.75616 | US $1378.08 |
1000+ | US $2.50560 | US $2505.60 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part #IPB020N10N5ATMA1
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesOptiMOS™
- ECCNEAR99
- MountSurface Mount
- Weight3.949996g
- FET TypeN-Channel
- Lead FreeContains Lead
- PackagingTape & Reel (TR)
- Published2013
- Rise Time26ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- Halogen FreeHalogen Free
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Case ConnectionDRAIN
- Fall Time (Typ)29 ns
- Factory Lead Time13 Weeks
- Power Dissipation375W
- Number of Channels1
- Number of Elements1
- Turn On Delay Time33 ns
- Vgs(th) (Max) @ Id3.8V @ 270μA
- Turn-Off Delay Time77 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max375W Tc
- Number of Terminations2
- Rds On (Max) @ Id, Vgs2m Ω @ 100A, 10V
- Transistor ApplicationSWITCHING
- Max Dual Supply Voltage100V
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs210nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)979 mJ
- Continuous Drain Current (ID)120A
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain-source On Resistance-Max0.002Ohm
- Pulsed Drain Current-Max (IDM)480A
- Drain to Source Breakdown Voltage100V
- Input Capacitance (Ciss) (Max) @ Vds15600pF @ 50V
- Drive Voltage (Max Rds On,Min Rds On)6V 10V
- Current - Continuous Drain (Id) @ 25°C120A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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