IPB075N04LGATMA1
- Manufacturer’s Part#:IPB075N04LGATMA1
- Manufacturer:
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- Series:OptiMOS™
- ECAD Model:
- Description:MOSFET N-CH 40V 50A TO263-3
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- In Stock: 2688
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- Available: 2688
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part #IPB075N04LGATMA1
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesOptiMOS™
- ECCNEAR99
- MountSurface Mount
- FET TypeN-Channel
- PackagingTape & Reel (TR)
- Pin Count4
- Published2007
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusObsolete
- Pbfree Codeyes
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Case ConnectionDRAIN
- Terminal FinishMATTE TIN
- Power Dissipation56W
- Terminal PositionSINGLE
- Additional FeatureLOGIC LEVEL COMPATIBLE
- Number of Elements1
- Vgs(th) (Max) @ Id2V @ 20μA
- Qualification StatusNot Qualified
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max56W Tc
- Reach Compliance Codeunknown
- Number of Terminations2
- Rds On (Max) @ Id, Vgs7.5m Ω @ 50A, 10V
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min40V
- Reflow Temperature-Max (s)40
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs36nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)20 mJ
- Continuous Drain Current (ID)50A
- Peak Reflow Temperature (Cel)260
- Drain to Source Voltage (Vdss)40V
- Input Capacitance (Ciss) (Max) @ Vds2800pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C50A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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